Browse > Article

Correlation between Leakage Current of Organic Treated Insulators and Grain Size of Pentacene Deposited film  

Oh Teresa (School of Electronics and Information Engineering, Cheongju University)
Kim Hong-Bae (School of Electronics and Information Engineering, Cheongju University)
Son Jae-Gu (School of Electronics and Information Engineering, Cheongju University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.43, no.6, 2006 , pp. 18-22 More about this Journal
Abstract
The inspection of surface properties under n-octadecyltrichlorosilane treated $SiO_2$ film was carried out by current-voltage characteristic and the scanning electron microscope. The voltage at zero current in low electric field is the lowest at 0.3 % OTS treated $SiO_2$ film with hybrid type. $SiO_2$ films changed from inorganic to hybrid or organic properties according to the increase of OTS content. OTS treated $SiO_2$ films with hybrid properties decreased the leakage currents, and the grain size of pentacene deposited sample was also the most small at the hybrid properties. The perpendicular generation of pentacene molecular was related with the surface of insulators. The surface with hybrid properties decreased the grain size, but that with inorganic or organic properties increased the grain size.
Keywords
OTS 처리 $SiO_2$ 절연막;누설전류;그레인 크기;유기물 특성;하이브리드 특성;무기물 특성;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. G. Simmons, 'Pools-Frenkel Effect and Schottky in Metal-Insuloror-Metal Systems,' Physial Review, vol. 155, pp. 657-660, 1967   DOI
2 C. A. Mead, 'Electron Transport Mechanism in Thin Insulating Films,' Physical Review, vol. 128, pp. 2088-2093, 1962   DOI
3 P. W. May, S. Hohn, W. N, Wang and N. A. Fox, 'Field emission conduction mechanisms in chemical vapor deposited diamond and diamondlike carbon films,' Appl. Phys. Lett. vol.27, pp. 2182-2184, 1998   DOI   ScienceOn
4 J. Frenkel, 'On pre-breakdown phenomena in insulators and electronic semiconductors,' Phys. Rev. 54, pp, 647-648, 1938   DOI
5 P. R. Emtage and W. Tantraporn, 'Schottky emission through thin inslulating films,' Physical Review letters, Vol. 8, No.7, pp. 267-268, 1962   DOI
6 T. Oh,' Generation of bonding structure due to organic carbon and organometallic carbon as a function of Gas source,' Jpn. J. Appl. Phys. Vol. 44, pp.4103-4107, 2005   DOI
7 M. J. Kellicutt, I. S. Suzuki, C. R. Burr, M. Suzuki, M. Ohashi and M. S. Whittingham, 'Variable-range-hopping conduction and the Pool-Frankel effect in a copper polyaniline vermiculite intercalation compound,' Physical Review B. vol. 47, No. 20, pp.13664-13673, 1993, May   DOI   ScienceOn
8 T. C. Chang, P. T. Liu, Y. S. Mor, S. M. Sze, Y. L. Yang, M. S. Feng, F. M. Pan, B. T. Dai, C. Y. Chang, 'The Novel Improvement of Low Dielectric Constant Methylsilsesquioxane by N2O Plasma Treatment,'J. Electrochem. Soc., vol.146, pp.3802-3806, 1999   DOI
9 D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson and D. G. Schlom, 'Pentacene Organic Thin-Film Transistors-Molecular Ordering and Mobility,' IEEE ELECTRON DEVICE LETTERS, 18, (1997) 87-89   DOI   ScienceOn
10 Ioannis Kymissis, C. D. Dirnitrakopoulos and Sampath Purushothaman, 'High-Performance Bottom Electrode Organic Thin-Film Transistors,' IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.48, pp.1060-1064, 2001   DOI   ScienceOn
11 Teresa Oh, 'Organic Thin Film Transistors Using Pentacene and SiOC film,' IEEE transactions on Nanotechnology, 5(2006) 23-29   DOI   ScienceOn