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Analytical Models for Breakdown Voltage and Specific On-Resistance of 4H-SiC Schottky Diodes  

Chung, Yong-Sung (Dept. of Fancy Toy Design, Sorabol College)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.6, 2008 , pp. 22-27 More about this Journal
Abstract
Analytical models for breakdown voltage and specific on-resistance of 4H-silicon carbide Schottky diodes have been derived successfully by extracting an effective ionization coefficient $\gamma$ from ionization coefficients $\alpha$ and $\beta$ for electron and hole in 4H-SiC. The breakdown voltages extracted from our analytical model are compared with experimental results. The specific on-resistance as a function of doping concentration is also compared with the ones reported previously. Good fits with the experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of about $10^{15}{\sim}10^{18}\;cm^{-3}$. The analytical results show good agreement with the experimental data for the specific on-resistance in the range of $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$.
Keywords
4H-SiC; Effective ionization coefficient; Breakdown voltage; Epilayer thickness; Specific on-resistance;
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