• Journal of IKEEE
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• v.28 no.1
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• pp.110-115
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• 2024

This paper analyzed the V_th (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced V_th variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the V_th decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by V_fe proportional to the channel radius, leads to a greater reduction in V_th in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in V_th compared to the O/N/O structure, resulting in larger V_th variations with increasing tapering angles.

• Smart Structures and Systems
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• v.3 no.2
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• pp.189-200
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• 2007

As a functional material, shape memory alloy (SMA) has attracted much attention and research effort to explore its unique properties and its applications in the past few decades. Some of its properties, in particular the electrical resistance (ER) based self-sensing property of SMA, have not been fully studied. Electrical resistance of an SMA wire varies during its phase transformation. This variation is an inherent property of the SMA wire, although it is highly nonlinear with hysteresis. The relationship between the displacement and the electrical resistance of an SMA wire is deterministic and repeatable to some degree, therefore enabling the self-sensing ability of the SMA. The potential of this self-sensing ability has not received sufficient exploration so far, and even the previous studies in literature lack generality. This paper concerns the utilization of the self-sensing property of a spring-biased Nickel-Titanium (Nitinol) SMA actuator for two applications: ER feedback position control of an SMA actuator without a position sensor, and estimation of the opening of a SMA actuated valve. The use of the self-sensing property eliminates the need for a position sensor, therefore reducing the cost and size of an SMA actuator assembly. Two experimental apparatuses are fabricated to facilitate the two proposed applications, respectively. Based on open-loop testing results, the curve fitting technique is used to represent the nonlinear relationships between the displacement and the electrical resistance of the two SMA wire actuators. Using the mathematical models of the two SMA actuators, respectively, a proportional plus derivative controller is designed for control of the SMA wire actuator using only electrical resistance feedback. Consequently, the opening of the SMA actuated valve can be estimated without using an extra sensor.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.253-261
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• 2008

Programmable metallizaton cell (PMC) memory device has been known as one of the next generation non-volatile memory devices, because it includes non-volatility, high speed and high ON/OFF resistance ratio. This paper reviews the operation principle of the device. Besides, the recent research results of professor Kozicki who firstly invented the device and investigated it for the memory applications, NEC corporation which studied it for the FPGA (field programmable gate array) switch applications, ETRI and chungnam national university which examined Te-based devices are introduced.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.172-177
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• 2014

We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.405-413
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• 2013

In this paper, a high-reliability differential paired 24-bit eFuse OTP memory with program-verify-read mode for PMICs is designed. In the proposed program-verify-read mode, the eFuse OTP memory can do a sensing margin test with a variable pull-up load in consideration of programmed eFuse resistance variation and can output a comparison result through a PFb (pass fail bar) pin by comparing a programmed datum with its read one. It is verified by simulation results that the sensing resistance is lower with $4k{\Omega}$ in case of the designed differential paired eFuse OTP memory than $50k{\Omega}$ in case of its dual-port eFuse OTP memory.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.1-9
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• 2011

Memristor is a portmanteau of "memory resistor". The resistance of memristor is changed depends on the history of electric charge that passed through the device and it is able to memorize the last resistance after turning off the power supply. This paper presents this device that has a high chance to be the next generation of commercial non-volatile memory and its behavior modeling using SPICE simulation. The memristor MOS content addressable memory (M_CAM) is also designed and simulated using the proposed behavioral model. The proposed M_CAM unit cell area and power consumption show an improvement around 40% and 96%, respectively, compare to the conventional SRAM based CAMs. The M_CAM layout is also implemented using 0.13${\mu}m$ mixed-signal CMOS process under 1.2 V supply voltage.

• Molecules and Cells
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• v.41 no.8
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• pp.724-732
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• 2018

Plant defence responses to various biotic stresses via systemic acquired resistance (SAR) are induced by avirulent pathogens and chemical compounds, including certain plant hormones in volatile form, such as methyl salicylate and methyl jasmonate. SAR refers to the observation that, when a local part of a plant is exposed to elicitors, the entire plant exhibits a resistance response. In the natural environment, plants are continuously exposed to avirulent pathogens that induce SAR and volatile emissions affecting neighbouring plants as well as the plant itself. However, the underlying mechanism has not been intensively studied. In this study, we evaluated whether plants "memorise" the previous activation of plant immunity when exposed repeatedly to plant defensive volatiles such as methyl salicylate and methyl jasmonate. We hypothesised that stronger SAR responses would occur in plants treated with repeated applications of the volatile plant defence compound MeSA than in those exposed to a single or no treatment. Nicotiana benthamiana seedlings subjected to repeated applications of MeSA exhibited greater protection against Pseudomonas syringae pv. tabaci and Pectobacterium carotovorum subsp. carotovorum than the control. The increase in SAR capacity in response to repeated MeSA treatment was confirmed by analysing the defence priming of the expression of N. benthamiana Pathogenesis-Related 1a (NbPR1a) and NbPR2 by quantitative reverse-transcription PCR compared with the control. We propose the concept of plant memory of plant defence volatiles and suggest that SAR is strengthened by the repeated perception of volatile compounds in plants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.174-175
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• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• International journal of steel structures
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• v.18 no.4
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• pp.1325-1335
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• 2018

This study dealt with investigating the seismic performance of the smart and shape memory alloy (SMA) and magnets plus rubber-spring (MRS) dampers and their effects on the seismic resistance of multiple-span simply supported bridges. The rubber springs in the MRS dampers were pre-compressed. For this aim, a set of experimental works was performed together with developing nonlinear analytical models to investigate dynamic responses of the bridges subjected to earthquakes. Fragility analysis and probabilistic assessment were conducted to assess the seismic performance for the overall bridge system. Fragility curves were then generated for each model and were compared with those of as-built. Results showed dampers could increase the seismic capacity of bridges. Furthermore, from system fragility curves, use of damper models reduced the seismic vulnerability in comparison to the as-built bridge model. Although the SMA damper showed the best seismic performance, the MRS damper was the most appropriate one for the bridge in that the combination of magnetic friction and pre-compressed rubber springs was cheaper than the shape memory alloy, and had the similar capability of the damper.

• BMB Reports
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• v.42 no.8
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• pp.475-481
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• 2009

Emerging data demonstrate pivotal roles for brain insulin resistance and insulin deficiency as mediators of cognitive impairment and neurodegeneration, particularly Alzheimer's disease (AD). Insulin and insulin-like growth factors (IGFs) regulate neuronal survival, energy metabolism, and plasticity, which are required for learning and memory. Hence, endogenous brain-specific impairments in insulin and IGF signaling account for the majority of AD-associated abnormalities. However, a second major mechanism of cognitive impairment has been linked to obesity and Type 2 diabetes (T2DM). Human and experimental animal studies revealed that neurodegeneration associated with peripheral insulin resistance is likely effectuated via a liver-brain axis whereby toxic lipids, including ceramides, cross the blood brain barrier and cause brain insulin resistance, oxidative stress, neuro-inflammation, and cell death. In essence, there are dual mechanisms of brain insulin resistance leading to AD-type neurodegeneration: one mediated by endogenous, CNS factors; and the other, peripheral insulin resistance with excess cytotoxic ceramide production.