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Modeling for Memristor and Design of Content Addressable Memory Using Memristor  

Kang, Soon-Ku (Dept. of Computer and Communication Engineering and Research Institute for Computer and Information Communication, Chungbuk National University)
Kim, Doo-Hwan (Dept. of Computer and Communication Engineering and Research Institute for Computer and Information Communication, Chungbuk National University)
Lee, Sang-Jin (Dept. of Computer and Communication Engineering and Research Institute for Computer and Information Communication, Chungbuk National University)
Cho, Kyoung-Rok (Dept. of Computer and Communication Engineering and Research Institute for Computer and Information Communication, Chungbuk National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.7, 2011 , pp. 1-9 More about this Journal
Abstract
Memristor is a portmanteau of "memory resistor". The resistance of memristor is changed depends on the history of electric charge that passed through the device and it is able to memorize the last resistance after turning off the power supply. This paper presents this device that has a high chance to be the next generation of commercial non-volatile memory and its behavior modeling using SPICE simulation. The memristor MOS content addressable memory (M_CAM) is also designed and simulated using the proposed behavioral model. The proposed M_CAM unit cell area and power consumption show an improvement around 40% and 96%, respectively, compare to the conventional SRAM based CAMs. The M_CAM layout is also implemented using 0.13${\mu}m$ mixed-signal CMOS process under 1.2 V supply voltage.
Keywords
CAM; M_CAM; SRAM;
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