1 |
Chen, G. & Chen, J. "Role of nitrogen in the crystallization of silicon nitride-doped chalcogenide glasses". J. Am. Ceram. Soc. 82, 2934-2936 (1999).
|
2 |
Kastner, M., Adler, D. & Fritzsche, H. "Valence-alternation model for localized gap states in lone-pair semiconductors". Phys. Rev. Lett. 37, 1504-1507 (1976).
DOI
|
3 |
Chen, G. & Chen, J. J. & Chen, W. "Raman spectra of Ge-Si-As-Se-Te-N. Phys". Chem. Glasses 38, 335-337 (1997).
|
4 |
Lee, W. et al. "Varistor-type bidirectional switch (JMAX>107A/, selectivity-104) for 3D bipolar resistive memory arrays". Symposium on VLSI Technology Digest of Technical Papers 2012, 37-38 (2012).
|
5 |
Waser, R. & Aono, M. "Nanoionics-based resistive switching memories". Nature Mater. 6, 833-840 (2007).
DOI
ScienceOn
|
6 |
Lee, M-J. et al. "A fast, high-endurance and scalable non-volatile memory device made from asymmetric bilayer structures". Nature Mater. 10, 625-630 (2011).
DOI
ScienceOn
|
7 |
Burr, G. W. et al. "Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield". Symposium on VLSI Technology Digest of Technical Papers 2012, 41-42 (2012).
|
8 |
Karpov, V. G., Kryukov, Y. A., Savransky, S. D. & Karpov, I. V. "Nucleation switching in phase change memory". Appl. Phys. Lett. 90, 123504 (2007).
DOI
ScienceOn
|
9 |
Ielmini, D. & Zhang, Y. "Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices". J. Appl. Phys. 102, 054517 (2007).
DOI
ScienceOn
|
10 |
Adler, D., Henisch, H. K. & Mott, N. "The mechanism of threshold switching in amorphous alloys", Reviews Modern Physics 50, 209-220 (1978).
DOI
|