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http://dx.doi.org/10.5757/JKVS.2008.17.4.253

Research trend of programmable metalization cell (PMC) memory device  

Park, Young-Sam (Electronics and Telecommunication Research Institute (ETRI))
Lee, Seung-Yun (Electronics and Telecommunication Research Institute (ETRI))
Yoon, Sung-Min (Electronics and Telecommunication Research Institute (ETRI))
Jung, Soon-Won (Electronics and Telecommunication Research Institute (ETRI))
Yu, Byoung-Gon (Electronics and Telecommunication Research Institute (ETRI))
Publication Information
Journal of the Korean Vacuum Society / v.17, no.4, 2008 , pp. 253-261 More about this Journal
Abstract
Programmable metallizaton cell (PMC) memory device has been known as one of the next generation non-volatile memory devices, because it includes non-volatility, high speed and high ON/OFF resistance ratio. This paper reviews the operation principle of the device. Besides, the recent research results of professor Kozicki who firstly invented the device and investigated it for the memory applications, NEC corporation which studied it for the FPGA (field programmable gate array) switch applications, ETRI and chungnam national university which examined Te-based devices are introduced.
Keywords
memory; semiconductor; programmable metalization cell memory; solid electrolyte;
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  • Reference
1 http://www.axontc.com
2 Y. S. Park, S. Y. Lee, S. M. Yoon, S. W. Jung, B. G. Yu, S. J. Lee and S. G. Yoon, Appl. Phys. Lett. 91, 162107 (2007)   DOI
3 M. Balakrishnan, M. N. Kozicki, C. Gopalan and M. Mitkova, IEEE Proceeding of DRC (Device Research Conference), 47 (2005)
4 M. N. Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar and M. Mitkova, IEEE Proceeding of NVMTS (Non-Volatile Memory Technology Symposium), 83 (2005)
5 C. Schindler, S. C. P. Thermadam, R. Waser and M. N. Kozicki, IEEE Trans. Elect. Dev. 54, 2762 (2007)   DOI   ScienceOn
6 T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, H. Sunamura, S. Fujieda, K. Terabe, T. Hasegawa and M. Aono, IEEE Symp. VLSI Tech., Dig. Tech. Pap. 38 (2007)
7 S. J. Lee, S. G. Yoon, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee and B. G. Yu, J. Vac. Sci. Tech. B 24, 2312 (2006)   DOI   ScienceOn
8 S. J. Lee, S. G. Yoon, S. M. Yoon, N. Y. Lee and B. G. Yu, J. Electrochem. Soc. 154, H853 (2007)   DOI   ScienceOn
9 S. J. Lee, S. G. Yoon, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee and B. G. Yu, Electrochem. Solid-State Lett. 9, G364 (2006)   DOI   ScienceOn
10 M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park and M. MitkovaNon, IEEE Proceeding of NVMTS (Non-Volatile Memory Technology Symposium), 10 (2004)
11 T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama and M. Aono, Appl. Phys. Lett. 82, 3032 (2003)   DOI   ScienceOn
12 S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama and M. Aono, IEEE J. Solid-State Circ. 40, 168 (2005)   DOI   ScienceOn
13 N. E. Gilbert and M. N. Kozicki, IEEE J. Solid-State Circ. 42, 1383 (2007)   DOI   ScienceOn
14 M. N. Kozicki, .C. Gopalan, M. Balakrishnan and M. Mitkova, IEEE Trans. Nanotech. 5, 535 (2006)   DOI   ScienceOn