• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.41-48
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• 2002

This paper presents a 18-mW, 2.5-㎓ fractional-N frequency synthesizer with l-bit $4^{th}$-order interpolative delta-sigma ($\Delta{\;}$\sum$)modulator to suppress fractional spurious tones while reducing in-band phase noise. A fractional-N frequency synthesizer with a quadruple prescaler has been designed and implemented in a $0.5-\mu\textrm{m}$ 15-GHz $f_t$ BiCMOS. Synthesizing 2.1 GHzwith less than 200 Hz resolution, it exhibits an in-band phase noise of less than -85 dBc/Hz at 1 KHz offset frequency with a reference spur of -85 dBc and no fractional spurs. The synthesizer also shows phase noise of -139 dBc/Hz at an offset frequency of 1.2 MHz from a 2.1GHz center frequency.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.209-212
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• 2000

Charge pump based upon a phase locked loop(PLL) is described. This charge pump show that it is possible to overcome the issue of charge pump current mismatch by using a current subtraction circuit. Also, this charge pump can suppress reference spurs and disturbance of the VCO control voltage. HSPICE simulations are performed using 0.25$\mu\textrm{m}$ CMOS process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.873-879
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• 2016

A charge pump circuit with very short turn-on time is presented for minimizing reference spurs in CMOS PLL frequency synthesizers. In the source switching charge pump circuit, applying proper voltages to the source nodes of the current source FETs can significantly reduce the unwanted glitch at the output current while not degrading the rising time, thus resulting in low spur at the synthesizer output spectrum. A 1.1-1.6 GHz PLL synthesizer employing the proposed charge pump circuit is fabricated in 65 nm CMOS. The current consumption of the charge pump is $490{\mu}A$ from 1 V supply. Compared to the conventional charge pump, it is shown that the reference spur is improved by dB through minimizing the turn-on time. Theoretical analysis is described to show that the measured results agree well with the theory.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.3
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• pp.283-289
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• 2018

A PLL with an unipolar charge pump and a loop filter consisting of sample-hold capacitor and Fvco-sampled feedforward loop filter. The proposed PLL not only reduces the chip area by replacing the resistance to a switch and a small capacitor but also reduces the variation of ${\Delta}VLPF$ and ${\Delta}{\Delta}VLPF$ to 1/6 and 1/5 respectively. The variation of ${\Delta}VLPF$ is related to the phase noise of VCO output and that of ${\Delta}{\Delta}VLPF$ is proportional to reference spurs. It has been simulated and verified with a 1.8V $0.18{\mu}m$ CMOS process and shown a good phase noise characteristics. We plan to fabricate chip based on the simulations and check performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.49-54
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• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.1
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• pp.63-67
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• 2009

Current mismatch in a charge pump causes degradation in spectral purity of the phase locked loops(PLLs), such as reference spurs. The current mismatch can be reduced by increasing the output resistance of the charge pump, as in a cascoded output stage. However as the supply voltage is lowered, it is hard to stack transistors. In this paper, a new method for reducing the current mismatch is proposed. The proposed method is based on a feed-forward compensation for the channel length modulation effect of the output stage. The new method has been demonstrated through simulations on typical $0.18{\mu}m$ CMOS circuits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.20-26
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• 2001

In this paper, the charge pump PLL using the dual PFD to improve the trade-off between acquisition behavior and locked behavior is proposed. This dual PFD consists of a positive edge triggered PFD and a negative edge triggered PFD. The proposed charge pump shows that it is possible to overcome the issue of the charge pump current imsmatch by the current subtraction circuit. Also, this charge pump can suppress reference spurs and disturbance of the VCO control voltage. The proposed charge pump PLL is simulated by SPICE using 0.25${\mu}m$ CMOS process parameters.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.37-42
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• 2012

In this paper, a new charge pump is proposed to reduce the timing mismatch in the conventional current-steering charge pumps. Conventional current-steering charge pumps used NMOS input stages both for UP and DOWN signals, which resulted in different numbers of stage for UP and DOWN delay paths. The proposed charge pump has equalized the numbers of stages for UP and DOWN signals by using a PMOS stage for the DOWN signal. The simulation results show that the conventional current-steering charge pump has 14ns and 6ns for optimized timing mismatches between UP and DOWN signals for turn-on and turn-off, respectively. On the other hand, the proposed charge pump has improved timing mismatches of 6ns and 5ns for turn-on and turn-off, respectively. As a result, the reference spurs are reduced from -26dBc to -39dBc for the proposed charge pump. The proposed charge pump was designed by using $0.18{\mu}m$ CMOS technology. The measurement results show that the maximum variation of the charging and discharging current over the charge pump output voltage range of 0.3~1.5V is approximately 1.5%.