• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.140-141
• /
• 2000

집적광학 회로의 구성요소 중 광 결합기는 파장에 따른 채널간 결합기로써 WDM은 물론 광 스위칭 소자로서 매우 중요한 위치에 있다. 더우기 수직형의 구조를 갖는 광결합기가 새로이 제안되면서 결합 길이를 줄여 전체 소자길이를 감소시킴으로써 고집적화는 물론, 도파로를 진행하는 동안 겪게되는 도파 손실을 최소화하려는 움직임 또한 활발하다. 그러나 이들 수직형 광결합기는 결합효율을 높이기 위하여 대부분 상 하부 도파로의 구조가 동일한 대칭형으로 제작됨에 따라, 이들은 매우 까다롭고 복잡한 공정을 갖게된다. 또한 이러한 공정의 복잡성과 두 도파로의 대칭성을 위한 반복작업은 오히려 제작공정의 불완전함으로 인하여 이론상의 이상적 결합에 비하여 효율이나 성능 면에서 상당한 저하를 가져오게 된다. 최근 연구되고있는 대부분의 폴리머를 이용한 광 결합기 역시 대칭형 구조를 가지며 $O_2$ RIE(Reactive ion etching) 건식 식각법으로 제작된다.$^{[1]}$ (중략)

• Proceedings of the Optical Society of Korea Conference
• /
• 1995.06a
• /
• pp.18-23
• /
• 1995

광도파로와 반도체 광증폭기를 직접하여 1.3$\mu$m 과장대에서 동작하는 2x2 InGaAsP/InP LD-gate형 광스위치를 제작하였다. 광스위치의 특성으로 광섬유 입출력간의 총삽입 손실이 6~10dB 이었고, 소광비가 40dB 이상으로서 세계적인 수준의 양호한 결과를 얻었다. 제작된 광스위치는 광도파로와 반도체 광증폭기 간의 높은 광 결합 효율을 얻기 위하여 RIE(Reactive Ion Etching) 에 의한 건식 식긱과 4회에 걸친 OMVPE(Organo Metallic Vapor Phase Epitaxy) 결정 성장을 이용하였으녀, 수동 도파로와 LD 사이의 광 결합 효율이 '90% 이상이 됨을 확인하였다. d;라힌 결과는 광집적화의 연구에 상당한 기에를 할 것으로 기대된다.

• ETRI Journal
• /
• v.35 no.4
• /
• pp.603-609
• /
• 2013

In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.

• Proceedings of the KIEE Conference
• /
• 1999.07g
• /
• pp.3316-3318
• /
• 1999

PMMA(poly-methyl methacrylate) microlens array is fabricated using transparent acrylic resin. PMMA is commonly used material for plastic lens due to its excellent visibility larger than 90% and other optical characteristics so much close to those of glass. Orthodontic resin (DENTSPLY International Inc.), commonly used in dentistry, is an transparent acrylic resin kit including MMA liquid and polymerization powder. Their mixture results in PMMA through polymerization. Using the resin PMMA layer is formed on the substrate through spin-coating. Designed pattern of lens structure is transferred to PMMA layer by RIE (Reactive Ion Etching) with oxygen plasma. Final lens shape is formed by thermal treatment that causes PMMA to reflow, The thickness of PMMA spun on the substrate is $17{\mu}m$ that is also final sag of microlens, Designed diameters of the microlenses are $200{\mu}m$, $300{\mu}m$,and $500{\mu}m$, respectively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.09a
• /
• pp.29-34
• /
• 2005

A optical head unit for nano optical probe away was developed. The optical probe array is generated by Talbot effect. The shape and thickness of microlens array(MLA) were designed to minimize the spot size at the foci of MLA. To increase the optical efficiency of the system and obtain the large tolerance for fabrication, aperture size was theoretically optimized. Then microlens illuminated aperture array(MLIAA) as an optical head unit was fabricated using a ultra violet(UV) molding process on aluminum aperture array. In this process, Al aperture array was fabricated separately using the photolithography and reactive ion etching(RIE) process. Optical properties of the generated optical probes were measured and compared at Talbot distance from the aperture array having a diameter of $1{\mu}m$ and MLIAA.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.477-477
• /
• 2010

태양전지용 TCO(Transfer Conductivity Oxide)는 가시광선 영역에서 높은 광 투과도(optical transmittance), 낮은 저항(resistivity), 우수한 박막 표면 거칠기(roughness) 등의 특성이 요구된다. 현재 가장 많이 사용되는 투명전극은 ITO(Indium Tin Oxide)가 보편적이다. 하지만 ITO에 사용되는 원료 재료인 In이 상대적으로 열적 안정성이 낮아 제조과정에서 필수적으로 수반되는 열처리가 제한적이며, 높은 원료 단가로 인하여 경제적인 측면에서 약점으로 지적되고 있다. 이러한 ITO 투명전극의 대체 재료로서 최근 ZnO 박막의 연구가 활발히 이루어지고 있다. MOCVD(Metal-Organic chemical vapor deposition)로 Soda lime glass 기판위에 약 900nm의 두께로 증착한 BZO(Boron-zinc-oxide)박막을 수소 플라즈마 처리공정을 한 뒤 산소 플라즈마를 이용하여 재처리 하였다. 산소 플라즈마 처리 공정은 RIE(Reactive Ion Etching)방식의 플라즈마 처리 장치를 사용하였고 공정 조건은 13.56 MHz의 RF주파수를 사용하여 RF 전력, 압력, 기판 온도 등을 변화시켜 BZO 박막의 전기적 특성을 측정 및 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.83-83
• /
• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Journal of Sensor Science and Technology
• /
• v.14 no.6
• /
• pp.423-429
• /
• 2005

In this paper, we proposed the fabrication process of the stable e-beam evaporation and the patterning of metals layer on the polydimethylsiloxane (PDMS) substrate. The metal layer was deposited under the various deposition rate, and its effect to the electrical and mechanical properties (e.g.: adhesion-strength of metal layer) was investigated. The influence of surface roughness to the adhesion-strength was also examined via the tape test. Here, we varied the roughness by changing the reactive ion etching (RIE) duration. The electrode patterning was performed through the conventional photolithography and chemical etching process after e-beam deposition of $200{\AA}$ Ti and $1000{\AA}$ Au. As a result, the adhesion strength of metal layer on the PDMS surface was greatly improved by the oxygen plasma treatment. The e-beam evaporation on the PDMS surface is known to create the wavy topography. Here, we found that such wavy patterns do not effect to the electrical and mechanical properties. In conclusion, the metal patterns with minimum $20{\mu}m$ line width was produced well via the our fabrication process, and its electrical conductance was almost similar to the that of metal patterns on the silicon or glass substrates.

• Journal of Sensor Science and Technology
• /
• v.15 no.1
• /
• pp.1-6
• /
• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.2
• /
• pp.93-99
• /
• 2006

In this paper, we fabricated and evaluated polydimethylsiloxane(PDMS)-based flexible and implantable micro electrodes. The electrode patterning was carried out with the photolithography and chemical etching process after e-beam evaporation of 100 ATi and 1000 A Au. The PDMS substrate was treated by oxygen plasma using reactive ion etching(RIE) system to improve the adhesiveness of PDMS and metal layers. The minimum line width of fabricated micro electrode was 20 $\mu$m. After finished patterning, we did packaging with PDMS and then brought up the electrode's part about 40 $\mu$m with gold electroplating. The Hank's balanced salt solution(HBSS) test was carried out for 6 month for endurance of fabricated micro electrode. We carried out in-vivo test for the evaluation of biocompatibility by implanting electrodes under the ICR mouse skin for 42 days.