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http://dx.doi.org/10.5369/JSST.2006.15.1.001

Fabrication of silicon nano-wire MOSFET photodetector for high-sensitivity image sensor  

Shin, Young-Shik (School of Electrical Engineering and Computer Science, Kyungpook National University)
Seo, Sang-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University)
Do, Mi-Young (School of Electrical Engineering and Computer Science, Kyungpook National University)
Shin, Jang-Kyoo (School of Electrical Engineering and Computer Science, Kyungpook National University)
Park, Jae-Hyoun (Korea Electronics Technology Institute)
Kim, Hoon (Korea Electronics Technology Institute)
Publication Information
Journal of Sensor Science and Technology / v.15, no.1, 2006 , pp. 1-6 More about this Journal
Abstract
We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.
Keywords
MOSFET; photodetector; silicon nano-wire;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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