Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side |
Won, Jongil
(Components & Materials Research Laboratory, ETRI)
Koo, Jin Gun (Components & Materials Research Laboratory, ETRI) Rhee, Taepok (Semicon Device) Oh, Hyung-Seog (R&D Center, Silicon Works) Lee, Jin Ho (Components & Materials Research Laboratory, ETRI) |
1 | H. Takahashi et al., "1200V Reverse Conducting IGBT," Proc. ISPSD, 2004, pp. 133-136. |
2 | T.K. Khanna, The Insulated Gate Bipolar Transistor (IGBT): Theory and Design, Hoboken, NJ: John Wiley & Sons, Inc., 2003. |
3 | B.J. Baliga, Fundamentals of Power Semiconductor Device, New York: Springer Science+Business Media Publishing, 2008. |
4 | J. Lutz et al., Semiconductor Power Devices; Physic, Characteristics, Reliability, NY: Springer Science+Business Media Publishing, 2011. |
5 | S. Voss, F.J. Niedernostheide, and H.J. Schulze, "Anode Design Variation in 1200-V Trench Field Stop Reverse Conducting IGBTs," Proc. ISPSD, 2008, pp. 169-172. |
6 | E. Griebl et al., "Light MOS: A New Power Semiconductor Concept Dedicated for Lamp Ballast Application," IEEE Ind. Appl. Conf., 2003, pp. 768-772. |
7 | H. Ruthing et al., "600V Reverse Conducting (RC-) IGBT for Drives Applications in Ultra-Thin Wafer Technology," Proc. ISPSD, 2007, pp. 89-92. |
8 | H. Jiang et al., "Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode," Electron. Dev. Lett., vol. 22, no. 12, Sept. 2012, pp. 1684-1686. |
9 | Datasheet of IHD06N60RA. www.infineon.com/IGBT |
![]() |