• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.50-53
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• 2019

In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with $Al_2O_3$. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the $Al_2O_3$ diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at $500^{\circ}C$ and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be $15.9{\mu}m$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.4
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• pp.151-155
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• 2017

The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1536-1538
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• 2002

Effects at thermal treatment on the structural and electrical properties at DLC films have been studied. The DLC films were deposited by using a modified FCVA system as a function at negative substrate bias voltage, deposition time, and nitrogen flow rate. The thermal treatment on DLC films could be achieved by performing the RTA process at $600^{\circ}C$, 2min. Structural investigation on the thermal treatment effect was evaluated by inspecting the Raman spectroscopy, XPS, AFM, and internal compressive stress. In addition, the electrical properties of DLC films were evaluated by using the high current source and Lab-View data acquisition system. As the result at RTA treatment, $sp^3/sp^2$ ratio and internal compressive stress of the DLC films were decreased tram 5% to 22% and from 1GPa to 3GPa, and the $I_D/I_G$ intensity ratios was increased from 0.19 to 0.35. It was also found that the variation of internal stress of DLC films strongly agree with the variation of $sp^3/sp^2$ fraction and $I_D/I_G$ intensity ratio.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.331-337
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• 2014

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.106-110
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• 1998

The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.