IEIE Transactions on Smart Processing and Computing

The Institute of Electronics and Information Engineers (대한전자공학회)
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Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

  • Chen, Xiaochi (Department of Electrical Engineering, Stanford University) ;
  • Huo, Yijie (Department of Electrical Engineering, Stanford University) ;
  • Cho, Seongjae (Department of Electronic Engineering, Gachon University) ;
  • Park, Byung-Gook (Department of Electrical and Computer Engineering with Inter-university Semiconductor Research Center (ISRC), Seoul National University) ;
  • Harris, James S. Jr. (Department of Electrical Engineering, Stanford University)
  • Received : 2014.01.15
  • Accepted : 2014.07.28
  • Published : 2014.10.31
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Abstract

Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

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