Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2019.29.2.050

Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film  

Hwang, Ji-Hyun (Department of Physics, University of Incheon)
Yang, Su-Won (Department of Materials Science and Engineering, University of Incheon)
Kim, Young-Kwan (Department of Materials Science and Engineering, University of Incheon)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.29, no.2, 2019 , pp. 50-53 More about this Journal
Abstract
In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with $Al_2O_3$. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the $Al_2O_3$ diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at $500^{\circ}C$ and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be $15.9{\mu}m$.
Keywords
RTA (Rapid Thermal Annealing); AIC (Aluminum Induced Crystallization); Alumina blasting; Silicon thin film crystallization;
Citations & Related Records
연도 인용수 순위
  • Reference
1 O. Nast, "Influence of interface and Al structure on layer exchange during aluminum-iduced crystallization of amorphous silicon", J. Appl. Phys. 88 (2000) 716.   DOI
2 A.G. Aberle, N.P. Harder and S. Oelting, "Formation of large-grained uniform poly-Si films on glass at low temperature", J. Crystal Growth 226 (2001) 209.   DOI
3 G.J. Gurp, "Diffusion-limited Si precipitation in evaporated Al/Si films", J. Appl. Phys. 44 (1973) 2040.   DOI
4 P. Mourik, E.J. Mittemeijer and Th.H. Keijser, "On precipitation in rapidly solidified aluminium-silicon alloys", J. Mater. Sci. 18 (1983) 2706.   DOI
5 K.-H. Kim and J.-S. Lee, "Introduction to solar cell production", 2 (DuYang-Sa, Seoul, 2009) p. 10.
6 X.H. Geng, J.M. Xue, H.C. Ge, H.B. Li, Z.P. Wang, Q.Z. Wang and H.Z. Ren, "Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells", Sol Energy Mater Sol Cells 75 (2003) 489.   DOI
7 D.G. Lim, H.W. Kim, K.S. Shin, S.H. Lee and J. Yi, "Multijuction solar cells using a-Si:H films on poly-Si wafer", The 5th Korea Conference on Semiconductors (1998) 521.
8 J.-H. Hwang, H. Kwak and M.H. Kwon, "Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier", J. Korean Phys. Soc. 64 (2014) 679.   DOI
9 K.Y. Lee, M. Muske, I. Gordon, M. Berginski, J. D'Haen, J. Hupkes, S. Gall and B. Rech, "Large-grained poly-Si films on ZnO:Al coated glass substrates", Thin Solid Films 516 (2008) 6869.   DOI
10 P.I. Widenborg and A.G. Aberle, "Surface morphology of poly-Si films made by aluminium-induced crystallization on glass substrates", J. Cryst. Growth 242 (2002) 270.   DOI