• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1009-1014
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• 2012

This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13-${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.83-88
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• 2007

The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.482-489
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• 2010

In this paper we have proposed a new architecture of DQ-IRM(Double-Quadrature Image Rejection Mixer) for image rejection in the low-IF receiver. It consist of a frequency-tunable RF PPF(Poly Phase Filter) and the quadrature mixers. The conventional DQ-IRM generates the quadrature RF signals for the RF wide band at once. But the proposed DQ-IRM with the frequency-tuable RF PPF generates the quadrature RF signals for the narrow band of 2~3 channels bandwidth, which is partitioned from the RF wide band. We designed the CMOS RF tuner for T-DMB(Terrestrial Digital Multimedia Broadcasting) with the proposed 3rd DQ-IRM using a 0.18um CMOS technology and verified the performances of the designed receiver such as the image rejection ratio, the noise figure and the power consumption. The overall NF of the RF tuner is about 1.26 dB and the image reject ratio is about 51 dB. The power consumption is 55.8 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.1-6
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• 2010

In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.9-18
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• 1998

A single RF transceiver chip for an extended GSM handset application was designedm, fabricated and evaluated. A RFIC was fabricated by using silicon BiCMOS process, and then packaged in 80 pin TQFP of $10 {\times} 10 mm^{2}$ in size. As a result, it was achieved guite reasonable integraty and good RF performance at the operation voltage of 3.3V. This paper describes development results of RF receiver section of the RFIC, which includes LNA, down conversion mixer, AGC, switched capacitor filter and down sampling mixer. The test results show that RF receiver section is well operated within frequency range of 925 ~960 MHz, which is defined on the extended GSM specification (E-GSM). The receiver section also reveals moderate power consumption of 67 mA and minimum detectable signal of -105 dBm.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.13 no.5
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• pp.21-26
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• 2014

This paper proposes a frequency reconfigurable antenna which operates at not only LTE but also other currently serviced bands. The high band(1,710-2,170 MHz) performance was satisfied through PIFA structure, and the low band performance through the additional RF Switch by changing the state between SW1 and SW2. When the RF switch is SW1 state, the operation bandwidth is 782-907 MHz (GSM), and 738-861 MHz (LTE) at OFF state. The proposed antenna has a omni-directional radiation pattern and measured peak gains were 0.04-4.68 dBi at the SW1 state and 0.92-1.53 dBi at the SW2 state, respectively. Judging from the results, proposed reconfigurable antenna is expected to be applied to LTE-Advanced mobile terminals since the antenna shows an outstanding performance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.496-503
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• 2010

The implementation of a RF transceiver for WRAN(Wireless Regional Area Network) system based on IEEE 802.22 standard using Cognitive Radio technology is presented in this paper. A CMOS RF transceiver IC for WRAN system operates in VHF/UHF(54~862MHz) broadband, and employs dual-path direct-conversion configuration and the in-band harmonic distortions are effectively suppressed by exploiting the dual-path direct conversion architecture. For 64QAM(3/4 coding rate) OFDM signal, an EVM of <-31.4dB(2.7%) has been achieved at 10dBm off-chip PA output power and the total chip area with pads is 12.95 mm2. The experimental results show that the proposed CMOS RF transceiver IC has perfect performance for WRAN system based on TDD(Time Division Duplex) mode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.6
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• pp.600-613
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• 1997

The implementation of a BTS(Base station Transceiver) for WLL system using W-CDMA(Wideband-Code Division Multiple Access) method is presented in this paper. It consists of three boards; receiver, transmitter and RF controller. Some RF parameters are considered and simulated by the RF simulation S/W using commercial and customized components specifications. The implemented transceiver of 5 MHz RF channel bandwidth satisfies the system requirements of a transceiver such as dynamic range, sensitivity in the receiver and spurious emission suppression in the transmitter. At the receiver, the experimental measurement showed 2.86 dB of NF and 60 dB above of dynamic range in AGC(Automatic Gain Control) locking. At the transmitter, the -49.46 dBc of spurious emission suppression is attained when the output power of the transmitter is 34.3 dBm. These results are good enough to meet to standard performance specifications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.277-280
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• 2004

p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.