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Extraction and Modeling of High-Temperature Dependent Capacitance-Voltage Curve for RF MOSFETs  

Ko, Bong-Hyuk (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Lee, Seong-Hearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.10, 2010 , pp. 1-6 More about this Journal
Abstract
In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.
Keywords
MOSFET; RF C-V; high-temperature; modeling;
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