[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.6109/jkiice.2012.16.5.1009

A 0.13-μm CMOS RF Front-End Transmitter For LTE-Advanced Systems

Kim, Jong-Myeong (동아대학교 전자공학과)
Kim, Chang-Wan (동아대학교 전자공학과)

Publication Information

Journal of the Korea Institute of Information and Communication Engineering / v.16, no.5, 2012 , pp. 1009-1014 More about this Journal

Abstract

This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13- ${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

Keywords

CMOS; Driver Amplifier; LTE-Advanced; Transmitter; Up-Conversion Mixer;

Citations & Related Records

Reference

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KSCI

A 0.13-μm CMOS RF Front-End Transmitter For LTE-Advanced Systems LTE-Advanced 표준을 지원하는 0.13-μm CMOS RF Front-end transmitter 설계

A 0.13-μm CMOS RF Front-End Transmitter For LTE-Advanced Systems