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Growth of p-ZnO by RF-DC magnetron co-sputtering  

Kang Seung Min (한서대학교 신소재공학과)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.14, no.6, 2004 , pp. 277-280 More about this Journal
Abstract
p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.
Keywords
p-ZnO; Epitaxial films; RF-DC magnetron co-sputtering;
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