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http://dx.doi.org/10.6109/JKIICE.2007.11.1.83

Reliability Characteristics of RF Power Amplifier with MOSFET Degradation  

Choi, Jin-Ho (부산외국어대학교 컴퓨터공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.11, no.1, 2007 , pp. 83-88 More about this Journal
Abstract
The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.
Keywords
Class-E; RF power amplifier; Reliability; Voltage stress;
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