• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1537-1544
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• 2022

When designing chip, it considers design specification, timing problem, and clock synchronization on place & route (P&R) process. P&R process is complicated because of considering various factors. Chip uses clock tree synthesis (CTS) to reduce clock path delay. The purpose of this study is to examine shallow-CTS algorithm for checking clock tree synthesizable. Using open source Parser-Verilog, register transfer level (RTL) synthesizable Verilog file is parsed and it uses Pre-CTS and Post-CTS process that is included shallow-CTS. Based on longest clock path in the Pre-CTS and Post-CTS stages, the standard deviation before and after buffer insertion is compared and analyzed for the accuracy of CTS. In this paper, It is expected that the cost and time problem could be reduced by providing a pre-clock tree synthesis verification method at the RTL level without confirming the CTS result using the time-consuming licensed EDA tool.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.8-13
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• 2015

Recently, Illumination industry of LED module has been focused to industry technology for energy conservation of nation. The LED device is excellent to power efficiency due to semiconductor light source element. And the application to the lighting circuit technology can be designed to the sensitive lighting system for human sensitivity control. In this paper, as a process for analyzing the operating temperature of standardized electronic device including LED device has analyzed about fusing character with in designed micro fuse for electronic device protection from the over current. Using the de-rating technique, which is performed to micro fuse fusing test in the range of $-30^{\circ}C{\sim}120^{\circ}C$ thermostatic chamber. To the output data in each temperature zone, it is performed to first-order linear fitting. Additionally, applying the resistance temperature coefficient and statistical data for the reliable analysis has derived to the metal element resistance of micro fuse with temperature change of the thermostatic chamber. As a research result, The changed temperature effect of thermostatic chamber was confirmed regarding fusing time change.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.2
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• pp.176-183
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• 2000

In this paper, sixth order hannonic injected PWM for improving‘ input CWTent distortion of single switch t three phase boost converter is presented. Peliodic sixth order hmmonic ${\gamma}$oltage is inj<:ded in the control circuit t to var${\gamma}$ the duty ratio of the converter switch within one switching cycle. In the result, the input phase c currents are forced to track the input voltage and an 해most unity power factor is obtained. Expelimental r results are verified by converter operating at 400V /6kW with three phase 140V ~220V input and by C02 arc w welding machine which was nonlinear load with 3 $\phi$ 220V input.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.46-52
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• 1994

DC and AC current crowding effects for microwave and high speed bipolar transistors are investigated in detail using a new and accurate measurement technique based on Z-parameter equationa. Using the new measurement technique dc and ac current crowding effects have been explained clearly in bipolar junction transistors. To model ac crowding effects a capacitive element defined as base capacitance (C$_b$), called ac crowding capacitance is added to base resistance in parallel thereby treating the base resistance(R$_b$) as base impedance Z$_b$. It is shown that base resistance decreases with increasing collector current due to dc current crowding and approaches to a certain limited value at high collector current due to current crowding and approaches to a certain limited value at high collector currents regardless of the emitter size. It is also observed that due to ac current crowding base capacitance increases with increasing collector current. To quantigy the ac crowding effects for SPICE circuit simulation the base capacitance(C$_b$) including the base depletion and diffusion components has been modeled with an analytical expression form.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.15-23
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• 2017

In this study, bioelectrical impedance analysis, which has been used to assess an alteration in intracellular fluid (ICF) of the body, was applied to detect intravenous infiltration. The experimental results are described as follows. Firstly, when infiltration occurred, the resistance gradually decreased with time and frequency i.e., the resistance decreased with increasing time, proportional to the amount of infiltrated intravenous (IV) solution. At each frequency, the resistance gradually decreased with time, indicating the IV solution (also blood) accumulated in the extracellular fluid (ECF) (including interstitial fluid). Secondly, the resistance ratio started to increase at infiltration, showing the highest value after 1.4 min of infiltration, and gradually decreased thereafter. Thirdly, the impedance ($Z_C$) of cell membrane decreased significantly (especially at 50 kHz) during infiltration and gradually decreased thereafter. Fourthly, Cole-Cole plot indicated that the positions of (R, $X_C$) shifted toward left owing to infiltration, reflecting the IV solution accumulated in the ECF. The resistance ($R_0$) at zero frequency decreased continuously over time, indicating that it is a vital impedance parameter capable of detecting early infiltration during IV infusion. Finally, the mechanism of the current flowing through the ECF, cell membrane, and ICF in the subcutaneous tissues was analyzed as a function of time before and after infiltration, using an equivalent circuit model of the human cell. In conclusion, it was confirmed that the infiltration could be detected early using these impedance parameters during the infusion of IV solution.

• Journal of Biomedical Engineering Research
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• v.24 no.2
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• pp.107-112
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• 2003

This paper describes a new simple QRS detection algorithm using index function based on resonance theory. The ECG signal can be modeled with several sinusoidal pulses and its first difference has some relations with the amplitude and frequency of sinusoidal pulse. Based on above fact, an index function, similar to the square of the imaginary part of a simple R-L-C circuit, was designed. A QRS complex is detected by applying the adaptive method to the response of index function. The algorithm showed a performance comparable to or higher than the other algorithms. Because it does not require any complicated preprocessing or postprocessing, it can be implemented in real time.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.59-65
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• 1999

In this paper, we design a entorpy encoder of HDTV/DTV encoder blocks on the basis of MPEG-II. The designed entropy encoder outputs its bit stream at 9Mbps bit rate inserting zero-stepping block to protect the depletion of buffer in case that the generated bit stream is stored in buffer and uses not only PROM bit combinational circuit to solve the problem of critical path, and packer block, one of submerge, is designed to packing into 24 bit unit using barrel shifter, and it is constructed to blocks of header information encoder, input information delay, submerge, and buffer control. Designed circuits is verified by VHDL function simulation, as a result of performing P&R with Gate compiler that apply $0.8{\mu}m$ Gate Array specification, pin and gate number of total circuits has been tested to each 235 and about 120,000.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.935-943
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• 2015

Permanent magnetic actuators (P.M.A.s) are widely used to drive medium-voltage-class vacuum circuit breakers (V.C.B.s). In this paper, a method for design optimization of a P.M.A. for V.C.B.s is discussed. An optimal design process employing the response surface method (R.S.M.) is proposed. In order to calculate electromagnetic and mechanical dynamic characteristics, an initial P.M.A. model is subjected to numerical analysis using finite element analysis (F.E.A.), which is validated by comparing the calculated dynamic characteristics of the initial P.M.A. model with no-load test results. Using tables of mixed orthogonal arrays and the R.S.M., the initial P.M.A. model is optimized to minimize the weight of the permanent magnet (P.M.) and to improve the dynamic characteristics. Finally, the dynamic characteristics of the optimally designed P.M.A. are compared to those of the initially designed P.M.A.