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http://dx.doi.org/10.4313/JKEM.2012.25.12.1009

Effect of Hydrogen Dilution Ratio on The Si Hetero-junction Interface and Its Application to Solar Cells  

Park, Jun-Hyoung (Department of Electronics Engineering, Chungnam University)
Myong, Seung-Yeop (Energy R&D Center, KISCO)
Lee, Ga-Won (Department of Electronics Engineering, Chungnam University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.12, 2012 , pp. 1009-1014 More about this Journal
Abstract
Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.
Keywords
Solar cells; Hydrogenated amorphous silicon; Hetero-junction; Spectroscopy ellipsometry;
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