Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effect of Hydrogen Dilution Ratio on The Si Hetero-junction Interface and Its Application to Solar Cells

수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용

  • Received : 2012.09.28
  • Accepted : 2012.11.14
  • Published : 2012.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

Keywords

References

  1. M. Taguchi, A. Terakawa, E. Maruyama, and M. Tanaka, Prog. Photovolt: Res. Appl., 13, 481 (2005). https://doi.org/10.1002/pip.646
  2. M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano, Jpn. J. Appl. Phys., 31, 3518 (1992). https://doi.org/10.1143/JJAP.31.3518
  3. E. Maruyama, A. Terakawa, M. Taguchi, T. Yoshimine, D. Ide, T. Baba, M. Shima, H. Sakata, and M. Tanaka, 4th WCPEC, 1455 (2006).
  4. H. Angermann, L. Korte, J. Rappich, E. Conrad, I. Sieber, M. Schmidt, K. Hubener, and J. Hauschild, Thin Solid Films, 516, 6775 (2008). https://doi.org/10.1016/j.tsf.2007.12.033
  5. T. H. Wang, E. Iwaniczko, M. R. Page, D. H. Levi, Y. Yan, H. M. Branz, and Q. Wang, Thin Solid Films, 501, 284 (2006). https://doi.org/10.1016/j.tsf.2005.07.196
  6. M. Schmidt, L. Korte, A. Laades, R. Stangl, C. Schubert, H. Angermann, E. Conrad, and K. V. Maydeel, Thin Solid Films, 515, 7475 (2007). https://doi.org/10.1016/j.tsf.2006.11.087
  7. H. Sakata, T. Nakai, T. Baba, M. Taguchi, S. Tsuge, K. Uchihashi, and S. Kiyama, 28th IEEE PVSC, 7 (2000).
  8. S. Tang, X. Liu, and X. Bao, Appl. Phys. Lett., 66, 469 (1995). https://doi.org/10.1063/1.114059
  9. G. E. Jellison and Jr. F. A. Modine, Appl. Phys. Lett., 69, 371 (1996). https://doi.org/10.1063/1.118064
  10. G. E. Jellison, and Jr. F. A. Modine, Appl. Phys. Lett., 69, 2137 (1996). https://doi.org/10.1063/1.118155
  11. J. H. Koh, A. S. Ferlauto, P. I. Rovira, C. R. Wronski, and R. W. Collins, Appl. Phys. Lett., 75, 2286 (1999). https://doi.org/10.1063/1.124992
  12. Q. Wang, M. R. Page, E. Iwaniczko, Y. O. Xu, L. Roybal, R. Bauer, B. To, H. C. Yuan, A. Duda, and Y. F. Yan, Proc. of the 33rd IEEE PVSEC (San Diego, 2008) p. 118.