• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.

• Journal of Microbiology and Biotechnology
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• v.18 no.7
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• pp.1274-1277
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• 2008

The inactivating efficiency of alternating high-voltage pulsed (AHVP) current was investigated in brine (20 w/v% NaCl) and saline (0.9 w/v% NaCl) inoculated with $1\times10^7$ cells/ml of Listeria monocytogenes. AHVP current at 12 V with 1 pulse completely inactivated L. monocytogenes in brine within 3 ms, while the bacteria in saline were fully inactivated by 10-pulsed electric treatment at 12 V within the same time. Electron microscopic observation demonstrated substantial structural damage of electrically treated L. monocytogenes in brine. These results suggest that AHVP treatment would be effective for the rapid and complete inactivation of L. monocytogenes in brine or saline solution.

• Journal of Electrical Engineering and Technology
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• v.13 no.5
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• pp.2011-2016
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• 2018

In this study, we have been investigated pin to plate pulsed bi-polar discharges in saline solutions, where bubble generation occurs. We integrate basic I-V-t electrical characteristics with the ICCD shadowgraph images, and finally instant and time averaged I-V waveforms. We observed that the bubble formation phase dynamics is quite different corresponding to the polarity applied to the pin electrode. When the pin electrode is a cathode, the bubble tends to be periodically detached from the pin electrode and the numerous tiny voltage spikes occur related to the electron emission from a pin cathode casing via, we judge from, direct dissociation of water molecules by energetic electrons. On the contrary, the bubble tends to stick to the pin electrode, when the pin electrode is anode; the bubble grows in size throughout the pulse duration. The dynamic electrical characteristics relative to the applied polarity of a pin electrode are presented and discussed by analysis of time averaged I-V waveforms.

• Journal of Information Display
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• v.3 no.1
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• pp.17-21
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• 2002

Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.179-184
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• 2011

This work investigated the effect of duty cycle and pulse frequency on the microstructures and properties of titanium nitride thin films deposited by asymmetric bipolar pulsed DC sputtering system. Oscilloscope traces of the I-V waveforms indicate high power and high current density outputs during the asymmetric bipolar pulsed mode. The grain size decreases with decreasing duty cycle. The duty cycle has a strong influence not only on the microstructural properties but also on the mechanical properties of titanium nitride films. Comparing with the continuous DC sputtering, the titanium nitride films prepared by pulsed DC asymmetric bipolar process exhibit better properties.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.86-92
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• 2014

The purpose of this comparative study was to investigate the properties of chromium nitride coatings deposited by asymmetric bipolar pulsed DC sputtering and DC sputtering system. Oscilloscope traces of the I-V waveforms indicate high power and high current density outputs during the asymmetric bipolar pulsed mode. The grain size decreases with decreasing duty cycle. The duty cycle has a strong influence not only on the microstructural properties but also on the mechanical properties of chromium nitride coatings. Comparing with the continuous DC sputtering, the chromium nitride coatings prepared by pulsed DC asymmetric bipolar process also exhibit better surface roughness.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.53-56
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• 2014

I-V characteristics of a cylindrical target in an ECR plasma were studied for sheath spatial evolutions when the target was pulsed biased to a high negative potential. The magnetic field effects on sheath thickness and sheath boundary speed were investigated by comparison between the experimental results and the theoretical results using the Child-Langmuir sheath model. The results showed that the magnetic field suppressed electron motion away from the target so that sheath thickness and sheath boundary speed decreased.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.16-23
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• 2018

Alternative technologies for sludge treatment and disposal need to be developed urgently because the amount of produced production has increased continuously. In this study, Pulsed Electric Fields (PEF) technique was applied for sludge solubilization and the performance was evaluated. The PEF equipped with electrodes coated by epoxy resin and teflon was inducted to the activated sludge suspension, and the effect of the coating materials on the solubilization was determined. In addition, the effect of the applied voltage on the solubilization yield was investigated as the applied voltage was increased from 6 to 12 and 15 kV. Sludge solubilization was not observed when the epoxy-coated electrode was used for PEF induction regardless of the applied voltage. However, sludge solubilization occurred when 12 and 15 kV were applied to the teflon-coated electrodes. The MLSS decreased to 9%, and the soluble-COD increased to 496% when the applied voltage was 15 kV. But sludge solubilization did not happen under 6 kV condition. The corona discharge was observed at applied voltages of 12 and 15 kV, (Ed- sorry but I cannot understand the following highlight) but if 6 kV, strongly indicating that the corona discharge make the sludge solubilized, which suggests that the critical voltage for sludge solubilization lies between 6 and 12 kV. Consequently, proper selection of electrode-coating materials and the applied voltage of PEF could lead to sludge solubilization by corona discharge.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.