• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Journal of Electrical Engineering and Technology
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• 제8권5호
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.

• Journal of Microbiology and Biotechnology
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• 제18권7호
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• pp.1274-1277
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• 2008

The inactivating efficiency of alternating high-voltage pulsed (AHVP) current was investigated in brine (20 w/v% NaCl) and saline (0.9 w/v% NaCl) inoculated with $1\times10^7$ cells/ml of Listeria monocytogenes. AHVP current at 12 V with 1 pulse completely inactivated L. monocytogenes in brine within 3 ms, while the bacteria in saline were fully inactivated by 10-pulsed electric treatment at 12 V within the same time. Electron microscopic observation demonstrated substantial structural damage of electrically treated L. monocytogenes in brine. These results suggest that AHVP treatment would be effective for the rapid and complete inactivation of L. monocytogenes in brine or saline solution.

• Journal of Electrical Engineering and Technology
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• 제13권5호
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• pp.2011-2016
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• 2018

In this study, we have been investigated pin to plate pulsed bi-polar discharges in saline solutions, where bubble generation occurs. We integrate basic I-V-t electrical characteristics with the ICCD shadowgraph images, and finally instant and time averaged I-V waveforms. We observed that the bubble formation phase dynamics is quite different corresponding to the polarity applied to the pin electrode. When the pin electrode is a cathode, the bubble tends to be periodically detached from the pin electrode and the numerous tiny voltage spikes occur related to the electron emission from a pin cathode casing via, we judge from, direct dissociation of water molecules by energetic electrons. On the contrary, the bubble tends to stick to the pin electrode, when the pin electrode is anode; the bubble grows in size throughout the pulse duration. The dynamic electrical characteristics relative to the applied polarity of a pin electrode are presented and discussed by analysis of time averaged I-V waveforms.

• Journal of Information Display
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• 제3권1호
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• pp.17-21
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• 2002

Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

• 한국표면공학회지
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• 제44권5호
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• pp.179-184
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• 2011

This work investigated the effect of duty cycle and pulse frequency on the microstructures and properties of titanium nitride thin films deposited by asymmetric bipolar pulsed DC sputtering system. Oscilloscope traces of the I-V waveforms indicate high power and high current density outputs during the asymmetric bipolar pulsed mode. The grain size decreases with decreasing duty cycle. The duty cycle has a strong influence not only on the microstructural properties but also on the mechanical properties of titanium nitride films. Comparing with the continuous DC sputtering, the titanium nitride films prepared by pulsed DC asymmetric bipolar process exhibit better properties.

• 한국표면공학회지
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• 제47권2호
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• pp.86-92
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• 2014

The purpose of this comparative study was to investigate the properties of chromium nitride coatings deposited by asymmetric bipolar pulsed DC sputtering and DC sputtering system. Oscilloscope traces of the I-V waveforms indicate high power and high current density outputs during the asymmetric bipolar pulsed mode. The grain size decreases with decreasing duty cycle. The duty cycle has a strong influence not only on the microstructural properties but also on the mechanical properties of chromium nitride coatings. Comparing with the continuous DC sputtering, the chromium nitride coatings prepared by pulsed DC asymmetric bipolar process also exhibit better surface roughness.

• 한국표면공학회지
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• 제47권1호
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• pp.53-56
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• 2014

I-V characteristics of a cylindrical target in an ECR plasma were studied for sheath spatial evolutions when the target was pulsed biased to a high negative potential. The magnetic field effects on sheath thickness and sheath boundary speed were investigated by comparison between the experimental results and the theoretical results using the Child-Langmuir sheath model. The results showed that the magnetic field suppressed electron motion away from the target so that sheath thickness and sheath boundary speed decreased.

• 한국산학기술학회논문지
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• 제19권10호
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• pp.16-23
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• 2018

하 폐수 슬러지 발생량의 꾸준한 증가로 인해 폐 슬러지의 효율적인 처리 기술개발이 요구되고 있다. 본 연구에서는 PEF (Pulsed Electric Fields) 기술을 활용하여 슬러지의 가용화를 통한 감량화 가능성을 평가하였다. PEF에 사용되는 스테인레스 재질의 전극에 테프론과 에폭시로 코팅한 후 활성슬러지 혼합액에 전계 펄스를 인가하여 전극 코팅에 따른 가용화 효율을 평가하였다. 또한 인가된 전압의 세기를 6, 12, 15 kV로 변화시켜 가며 가용화 정도를 평가하였다. 에폭시 코팅 전극에서는 MLSS, 용존성-COD, -TN, -TP를 분석한 결과 슬러지의 가용화가 발생하지 않은 것으로 나타났다. 그러나 테프론으로 코팅한 전극에서는 MLSS는 최대 9 % 감소하였고 MLVSS 역시 최대 10 % 감소하였다. 또한 용존성-COD는 최대 496 % 증가하였다. 인가전압 6 kV 하에서는 가용화가 거의 발생하지 않았으나, 12 kV와 15 kV의 전압에서는 슬러지 가용화가 발생한 것으로 나타났다. 또한 슬러지 가용화가 발생한 12 kV와 15 kV의 전압에서는 코로나가 발생한 것으로 보아 슬러지 가용화는 코로나에 의해 유도되었으며, 코로나가 발생하는 임계전압이 존재하는 것으로 판단되었다. 결론적으로 PEF의 인가전압과 적절한 코팅제를 선택하여 코로나 발생을 제어함으로써 슬러지의 가용화를 유도할 수 있음을 확인하였다.

• 한국표면공학회지
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• 제36권4호
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.