• Title/Summary/Keyword: Power electronic converter

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On the Design of Power Supply System for Freight Train Reefer Container Based on Simulation

  • Kim, Joouk;Hwang, Sunwoo;Lee, Jae-Bum;Hwang, Jaemin;Chae, Uri
    • International Journal of Internet, Broadcasting and Communication
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    • v.14 no.3
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    • pp.249-257
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    • 2022
  • In recent years, if we order food by easily accessing the online market with our smartphone, we can receive the product in a fresh state at dawn the next day. Cold chain is an industry that can create high added value because it has both the characteristics of general logistics and sensitivity to temperature. Based on the electrical specifications derived from the reefer container capacity requirement investigation, we proved that power supply to up to 33 reefer containers can be made by using three additional auxiliary power supplies which are applied for freight trains in Korea. In this paper, we conducted a research on a design of power supply system for freight train reefer container based on simulation as a basic research necessary for low-temperature distribution and cold chain construction based on the reefer container railroad. Consequently, the simulation was conducted using the three-phase inverter diagram in PSIM and the SVPWM (3-harmonic injection method) control technique, and it was verified that the required power voltage was satisfied with 622Vdc, which is lower than the input voltage of general SPWM of 718Vdc. The details of this paper could be used as a foundational study for constructing cold chains based on a reefer container dedicated to freight trains in the future.

Development of a Programmable Multi-Output Adapter (프로그램 가능한 다출력 아답타 개발)

  • Chai, Yong-Yoong;Do, Wang-Lok
    • The Journal of the Korea institute of electronic communication sciences
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    • v.10 no.6
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    • pp.699-706
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    • 2015
  • A previous adapter have a single-ouput, however, a demand of a multi-output adapter increase in the recent industrial site. In order to satisfy the demand, in this research, we implement a programmable high efficiency multi-output adapter. The basic structure of the adapter introduced in this paper is a sort of flyback. The way for producing the reference voltage of the adapter proposed is similar to the way in the general flyback implemented with TL431. In addition to the basic concept of the design, however, we introduce a digital variable resistor, AD5246BKSZ10-RL7 and a microcontroller for changing a programmable multi-output. It makes output be variable that the digital variable resistor change the reference voltage of the adapter by order of the microcontroller. The adapter output voltage is controllable in the range of 20V by the user, and the power efficiency is proven to be 85%.

A Calibration-Free 14b 70MS/s 0.13um CMOS Pipeline A/D Converter with High-Matching 3-D Symmetric Capacitors (높은 정확도의 3차원 대칭 커패시터를 가진 보정기법을 사용하지 않는 14비트 70MS/s 0.13um CMOS 파이프라인 A/D 변환기)

  • Moon, Kyoung-Jun;Lee, Kyung-Hoon;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.12 s.354
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    • pp.55-64
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    • 2006
  • This work proposes a calibration-free 14b 70MS/s 0.13um CMOS ADC for high-performance integrated systems such as WLAN and high-definition video systems simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs signal insensitive 3-D fully symmetric layout techniques in two MDACs for high matching accuracy without any calibration. A three-stage pipeline architecture minimizes power consumption and chip area at the target resolution and sampling rate. The input SHA with a controlled trans-conductance ratio of two amplifier stages simultaneously achieves high gain and high phase margin with gate-bootstrapped sampling switches for 14b input accuracy at the Nyquist frequency. A back-end sub-ranging flash ADC with open-loop offset cancellation and interpolation achieves 6b accuracy at 70MS/s. Low-noise current and voltage references are employed on chip with optional off-chip reference voltages. The prototype ADC implemented in a 0.13um CMOS is based on a 0.35um minimum channel length for 2.5V applications. The measured DNL and INL are within 0.65LSB and l.80LSB, respectively. The prototype ADC shows maximum SNDR and SFDR of 66dB and 81dB and a power consumption of 235mW at 70MS/s. The active die area is $3.3mm^2$.

Technology Development of Entry-Level MiC Smart Photovoltaic System based on SOC (SoC 기반 보급형 MiC 스마트 태양광발전시스템 기술개발)

  • Yoon, Yongho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.20 no.3
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    • pp.129-134
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    • 2020
  • Moisture infiltration inside the solar cell module, filling of EVA sheet, melting of the frame seal, and deterioration of power generation performance in the module one year after installation are occurring. Whitening phenomenon, electrode corrosion phenomenon, and dielectric breakdown phenomenon are appearing in solar cell module installed in Korea before 5-7 years, leading to deterioration of power generation performance, and big problems for long-term reliability and long life technology are emerging. Therefore, in order to solve these problems, the development of a micro inverter (MiCrco Inverter Converter, MiC) including the function of securing the durability of the solar cell module and monitoring the aging progress and the solar cell based on the monitoring data from the MiC smart monitoring programs have been proposed to determine the aging of modules. In addition, in order to become a highly efficient solar smart monitoring system through systematic operation management through IT convergence with MiC that has enhanced monitoring function of solar cell module, SoC(System On Chip) in micro inverter is the environment for solar cell module. There is a demand for functions that can detect information in a complex manner and perform communication and control when necessary. Based on these requirements, this paper aims to develop SoC-based low-cost MiC smart photovoltaic system technology.

A UHF-band Passive Temperature Sensor Tag Chip Fabricated in $0.18-{\mu}m$ CMOS Process ($0.18-{\mu}m$ CMOS 공정으로 제작된 UHF 대역 수동형 온도 센서 태그 칩)

  • Pham, Duy-Dong;Hwang, Sang-Kyun;Chung, Jin-Yong;Lee, Jong-Wook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.45-52
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    • 2008
  • We investigated the design of an RF-powered, wireless temperature sensor tag chip using $0.18-{\mu}m$ CMOS technology. The transponder generates its own power supply from small incident RF signal using Schottky diodes in voltage multiplier. Ambient temperature is measured using a new low-power temperature-to-voltage converter, and an 8-bit single-slope ADC converts the measured voltage to digital data. ASK demodulator and digital control are combined to identify unique transponder (ID) sent by base station for multi-transponder applications. The measurement of the temperature sensor tag chip showed a resolution of $0.64^{\circ}C/LSB$ in the range from $20^{\circ}C$ to $100^{\circ}C$, which is suitable for environmental temperature monitoring. The chip size is $1.1{\times}0.34mm^2$, and operates at clock frequency of 100 kHz while consuming $64{\mu}W$ power. The temperature sensor required a -11 dBm RF input power, supported a conversion rate of 12.5 k-samples/sec, and a maximum error of $0.5^{\circ}C$.

A 14b 100MS/s $3.4mm^2$ 145mW 0.18um CMOS Pipeline A/D Converter (14b 100MS/s $3.4mm^2$ 145mW 0.18un CMOS 파이프라인 A/D 변환기)

  • Kim Young-Ju;Park Yong-Hyun;Yoo Si-Wook;Kim Yong-Woo;Lee Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.5 s.347
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    • pp.54-63
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    • 2006
  • This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.

A Low Jitter Delay-Locked Loop for Local Clock Skew Compensation (로컬 클록 스큐 보상을 위한 낮은 지터 성능의 지연 고정 루프)

  • Jung, Chae-Young;Lee, Won-Young
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.2
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    • pp.309-316
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    • 2019
  • In this paper, a low-jitter delay-locked loop that compensates for local clock skew is presented. The proposed DLL consists of a phase splitter, a phase detector(PD), a charge pump, a bias generator, a voltage-controlled delay line(VCDL), and a level converter. The VCDL uses self-biased delay cells using current mode logic(CML) to have insensitive characteristics to temperature and supply noises. The phase splitter generates two reference clocks which are used as the differential inputs of the VCDL. The PD uses the only single clock from the phase splitter because the PD in the proposed circuit uses CMOS logic that consumes less power compared to CML. Therefore, the output of the VCDL is also converted to the rail-to-rail signal by the level converter for the PD as well as the local clock distribution circuit. The proposed circuit has been designed with a $0.13-{\mu}m$ CMOS process. A global CLK with a frequency of 1-GHz is externally applied to the circuit. As a result, after about 19 cycles, the proposed DLL is locked at a point that the control voltage is 597.83mV with the jitter of 1.05ps.

A Design of a Reconfigurable 4th Order ΣΔ Modulator Using Two Op-amps (2개의 증폭기를 이용한 가변 구조 형의 4차 델타 시그마 변조기)

  • Yang, Su-Hun;Choi, Jeong-Hoon;Yoon, Kwang Sub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.5
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    • pp.51-57
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    • 2015
  • In this paper, in order to design the A / D converter with a high resolution of 14 bits or more for the biological signal processing, CMOS delta sigma modulator that is a 1.8V power supply voltage - were designed. we propose a new structure of The fourth order delta-sigma modulator that needs four op amps but we use only two op amps. By using a time -interleaving technique, we can re-construct the circuit and reuse the op amps. Also, we proposed a KT/C noise reduction circuit to reduce the thermal noise from a noisy resistor. We adjust the size of sampling capacitor between sampling time and integrating time, so we can reduce almost a half of KT/C noise. The measurement results of the chip is fabricated using a Magna 0.18um CMOS n-well1 poly 6 metal process. Power consumption is $828{\mu}W$ from a 1.8V supply voltage. The peak SNDR is measured as a 75.7dB and 81.3dB of DR at 1kHz input frequency and 256kHz sampling frequency. Measurement results show that KT/C noise reduction circuit enhance the 3dB of SNDR. FOM of the circuit is calculated to be 142dB and 41pJ / step.

A 15b 50MS/s CMOS Pipeline A/D Converter Based on Digital Code-Error Calibration (디지털 코드 오차 보정 기법을 사용한 15비트 50MS/s CMOS 파이프라인 A/D 변환기)

  • Yoo, Pil-Seon;Lee, Kyung-Hoon;Yoon, Kun-Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.1-11
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    • 2008
  • This work proposes a 15b 50MS/s CMOS pipeline ADC based on digital code-error calibration. The proposed ADC adopts a four-stage pipeline architecture to minimize power consumption and die area and employs a digital calibration technique in the front-end stage MDAC without any modification of critical analog circuits. The front-end MDAC code errors due to device mismatch are measured by un-calibrated back-end three stages and stored in memory. During normal conversion, the stored code errors are recalled for code-error calibration in the digital domain. The signal insensitive 3-D fully symmetric layout technique in three MDACs is employed to achieve a high matching accuracy and to measure the mismatch error of the front-end stage more exactly. The prototype ADC in a 0.18um CMOS process demonstrates a measured DNL and INL within 0.78LSB and 3.28LSB. The ADC, with an active die area of $4.2mm^2$, shows a maximum SNDR and SFDR of 67.2dB and 79.5dB, respectively, and a power consumption of 225mW at 2.5V and 50MS/s.

Design of a Readout Circuit of Pulse Rate and Pulse Waveform for a U-Health System Using a Dual-Mode ADC (이중 모드 ADC를 이용한 U-Health 시스템용 맥박수와 맥박파형 검출 회로 설계)

  • Shin, Young-San;Wee, Jae-Kyung;Song, Inchae
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.9
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    • pp.68-73
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    • 2013
  • In this paper, we proposed a readout circuit of pulse waveform and rate for a U-health system to monitor health condition. For long-time operation without replacing or charging a battery, either pulse waveform or pulse rate is selected as the output data of the proposed readout circuit according to health condition of a user. The proposed readout circuit consists of a simple digital logic discriminator and a dual-mode ADC which operates in the ADC mode or in the count mode. Firstly, the readout circuit counts pulse rate for 4 seconds in the count mode using the dual-mode ADC. Health condition is examined after the counted pulse rate is accumulated for 1 minute in the discriminator. If the pulse rate is out of the preset normal range, the dual-mode ADC operates in the ADC mode where pulse waveform is converted into 10-bit digital data with the sampling frequency of 1 kHz. These data are stored in a buffer and transmitted by 620 kbps to an external monitor through a RF transmitter. The data transmission period of the RF transmitter depends on the operation mode. It is generally 1 minute in the normal situation or 1 ms in the emergency situation. The proposed readout circuit was designed with $0.11{\mu}m$ process technology. The chip area is $460{\times}800{\mu}m^2$. According to measurement, the power consumption is $161.8{\mu}W$ in the count mode and $507.3{\mu}W$ in the ADC mode with the operating voltage of 1 V.