• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.35 no.1
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• pp.65-76
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• 1999

Our status of off-shore stow-net fishery is in face with many difficult problems; the lack of fisherman by evading the 3-D occupation, the safety accident by unskilled crew and old type fishing system. In order to solve those problems, it is necessary to save the man power and ensure the safety of fishing work by the effective utilization of power and automatization of fishing gear system. This is consists of the side drum driven by main engine, the net hauler, the bow and stern capstan, jib crane etc. Therefore, we suggest the design on unification of power device of fishing gear system as follows; (1) fishing system by uni-hydraulic power and (2) fishing system by electric motor and electro-hydraulic power.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.84-86
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• 2018

Active hybrid solid state transformer(AHSST) is newly emerging as a device to maintan the power quality of power distribution. AHSST has a simple structure in which a power electronics device is connected in series to a conventional distribution transformer. The connected power electronics device maintains the constant voltage regardless of the primary grid voltage fluctuation through the secondary voltage control to improve the power quality. It also has a simple structure compare to conventional solid state transformer system and can achieve the same performance with fractionally-rated converter. This paper proposes an multi-level converter based on AHSST system that has a simpler control method and wider voltage control range than the conventional AHSST. The proposed system is verified by simulations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.6-11
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• 2005

In this paper, two types of vertical SIT(Static Induction Transistor) structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. First, a trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. Second, a trench gate-source region power SIT device is proposed to obtain more higher forward blocking voltage and forward blocking characteristics at the same size. The two proposed devices have superior electrical characteristics when compared to conventional device. In the proposed trench gate oxide power SIT, the forward blocking voltage is considerably improved by using the vertical trench oxide and the forward blocking voltage is 1.5 times better than that of the conventional vertical power SIT. In the proposed trench gate-source oxide power SIT, it has considerable improvement in forward blocking characteristics which shows 1500V forward blocking voltage at -10V of the gate voltage. Consequently, the proposed trench oxide power SIT has the superior stability and electrical characteristics than the conventional power SIT.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.1-389.1
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.230-233
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• 2011

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

• KEPCO Journal on Electric Power and Energy
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• v.6 no.3
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• pp.253-257
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• 2020

The local information processing devices are devices that process information by converting voltage, current, and digital electric signals from legacy-type power facility into IEC 61850 based data. It acquires and processes the operation information of legacy-type power facility, performs control of power facility, and interlock function using internal logic. In particular, the time to convert data to process input and output information for a device is important because a number of protection relay input and output signals are handled by only one device. This paper introduces test methods and cases for measuring IEC 61850 communication function and input/output data conversion time of local information processing device.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.3
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• pp.81-87
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• 2015

In order to effectively protect electrical and electronic circuits which are extremely susceptible to lightning surges, multi-stage surge protection circuits are required. This paper presents the operational characteristics of the two-stage hybrid surge protection circuit in extra-low voltage DC power lines. The hybrid surge protective device consists of the gas discharge tube, transient voltage suppressor, and series inductor. The response characteristics of the proposed hybrid surge protective device to combination waves were investigated. As a result, the proposed two-stage surge protective device to combination wave provides the tight clamping level of less than 50V. The firing of the gas discharge tube to lightning surges depends on the de-coupling inductance and the rate-of-change of the current flowing through the transient voltage suppressor. The coordination between the upstream and downstream components of the hybrid surge protective device was satisfactorily achieved. The inductance of a de-coupler in surge protective circuits for low-voltage DC power lines, relative to a resistance, is sufficiently effective. The voltage drop and power loss due to the proposed surge protective device are ignored during normal operation of the systems.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.3
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• pp.276-284
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• 2009

In this paper, we develop the image transfer remote maintenance monitoring system for hand held device which can compensate defects of human mistake. The human mistakes always happen when the worker communicate information each other to check and maintenance the equipment of the power plant under bad circumstance such as small place and long distance in power plant. A worker couldn't converse with other when in noisy place like Power plant. So, we make some hand device for handy size and able to converse in noisy place. The developed system can have improvement of productivity through increasing plant operation time. And developed system is composed of advanced H/W(hard ware) system and S/W(soft ware)system. The H/W system consist of media server unit, communication equipment with hand held device, portable camera, mike and head set. The advanced s/w system consist of data base system, client pc(personal computer) real time monitoring system which has server GUI(graphic user interface) program, wireless monitoring program and wire ethernet communication program. The client GUI program is composed of total solution program as pc camera program, and phonetic conversation program etc.. We analyzed the required items and investigated applicable part in the image transfer remote maintenance monitoring system with hand held device. Also we investigated linkage of communication protocol for developed prototype, developed software tool of two-way communication and realtime recording skill of voice with image. We confirmed the efficiency by the field test in preventive maintenance of plant power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.463-466
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• 2000

According to the development of the semiconductor micro device technology, IC chip trends the high integrated, low power tendency. Nowadays, it can be showed the tendency of single chip in system level. But in the system level, IC operates by multi power supply voltages. So, semiconductor process is necessary for these multi power operation. Therefore, in this paper, dual gate high voltage device that operate by multi power supply of 5V and 20V fabricated in the 0.5${\mu}{\textrm}{m}$ CMOS process technology and its electrical characteristics were analyzed. The result showed that the characteristics of the 5V device almost met with the SPICE simulation, the SPICE parameters are the same as the single 5V device process. And the characteristics of 20V device showed that gate length 3um device was available without degradation. Its current was 520uA/um, 350uA/um for NMOS, PMOS and the breakdown voltages were 25V, 28V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.27-30
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• 2004

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.