• Parasites, Hosts and Diseases
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• 제50권4호
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• pp.379-384
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• 2012

Resistance of Plasmodium spp. to anti-malarial drugs is the primary obstacle in the fight against malaria, and molecular markers for the drug resistance have been applied as an adjunct in the surveillance of the resistance. In this study, we investigated the prevalence of mutations in pvmdr1, pvcrt-o, pvdhfr, and pvdhps genes in temperate-zone P. vivax parasites from central China. A total of 26 isolates were selected, including 8 which were previously shown to have a lower susceptibility to chloroquine in vitro. For pvmdr1, pvcrt-o, and pvdhps genes, no resistance-conferring mutations were discovered. However, a highly prevalent (69.2%), single-point mutation (S117N) was found in pvdhfr gene. In addition, tandem repeat polymorphisms existed in pvdhfr and pvdhps genes, which warranted further studies in relation to the parasite resistance to antifolate drugs. The study further suggests that P. vivax populations in central China may still be relatively susceptible to chloroquine and sulfadoxine-pyrimethamine.

• 전력전자학회논문지
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• 제21권1호
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• pp.88-93
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• 2016

LCL filters are widely used in high-order harmonics attenuation of output currents in grid-connected inverters. However, output currents of grid-connected inverters with LCL filters can become unstable because of the resonance of the filters. Given that the characteristics of output currents in inverters mostly depend on filter performance, the exact analysis of filters by considering parasitic components is necessary for both harmonics attenuation and current control. LCL filters have three or four parasitic components: the series and/or parallel resistance of the filter capacitor and the series resistance of the two filter inductors. Most studies on LCL filters have focused on the parasitic components of the filter capacitor. Although several studies have addressed the parasitic components of the filter inductor at the inverter side, no study has yet investigated the concurrent effects of series resistance in both filter inductors in detail. This paper analyzes LCL filters by considering series resistance in both filter inductors; it proposes an active damping method based on the virtual series resistance of LCL filters. The performance of the proposed active damping is then verified through both simulation and experiment using Hardware-in-the-Loop Simulator(HILS).

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.49-53
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• 2005

The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10$\%$-20$\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• 전자공학회논문지
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• 제52권10호
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• pp.33-46
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• 2015

본 논문에서는 ITRS(International Technology Roadmap for Semiconductors)를 따라 스케일 다운된 FinFET 소자의 디지털 및 아날로그 회로의 성능을 예측했다. 회로 성능의 정확한 예측을 위해 기생 커패시턴스와 기생 저항 모델을 개발해 3D Technology CAD 해석 결과와 비교해 오차를 2 % 미만으로 달성했다. 기생 커패시턴스 모델은 conformal mapping 방식을 기반으로 모델링 되었으며, 기생 저항 모델은 BSIM-CMG에 내장된 기생 저항 모델을 핀 확장 영역 구조 변수($L_{ext}$) 변화에 따른 기생 저항 성분 변화를 반영 할 수 있도록 개선했다. 또한, 공정 단위 변화에 대해 소자의 전압전류의 DC 특성을 반영하기 위해 BSIM-CMG 모델의 DC 피팅을 진행하는 알고리즘을 개발했다. BSIM-CMG에 내장된 기생 모델을 본 연구에서 개발한 저항과 커패시턴스 모델로 대체해 압축 모델 내부에 구현하여, SPICE 시뮬레이션을 통해 스케일 다운된 FinFET 소자의 $f_T$, $f_{MAX}$, 그리고 링 오실레이터와 공통 소스 증폭기의 기생 성분으로 인한 특성변화를 분석했다. 정확한 기생 성분 모델을 적용해 5 nm FinFET 소자까지 회로 특성을 정량적으로 제시했다. 공정 단위가 감소함에 따라 소자의 DC 특성이 개선될 뿐만 아니라 기생 성분의 영향이 감소하여, 회로 특성이 향상됨을 예측했다.

• 대한전자공학회논문지
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• 제25권1호
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• pp.101-107
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• 1988

This paper proposes a circuit extractor which extracts a netlist from the CIF input file cntaining the layout mask artwork informations. The circuit extractor extracts transistors and their interconnections, and calculates circuit parameter such as parasitic resistance and parasitic capacitance from the mask informations. When calculating the parasitic resistance, we consider the current flow path to reduce the errors caused by the resistance approximation. Similarly, we consider the coupling capacitance which has an effect on the circuit characteristics, when the parasitic capacitances are calculated. Therefore, using these parameter values as an input to circuit simulation, the circuit characteristics such as delay time can be estimated accurately. The presented circuit extraction algorithm uses a multiple storage quad tree as a data sturucture for storing and searching the 2-dimensional geometric data of mask artwork. Also, the proposed algorithm is technologically independent to work across a wide range of MOS technologies without any change in the algorihm.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.525-536
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• 2014

Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

• Parasites, Hosts and Diseases
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• 제58권5호
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• pp.543-550
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• 2020

Mosquitoes are globally distributed and important vectors for the transmission of many human diseases. Mosquito control is a difficult task and the cost of preventing mosquito-borne diseases is much lower than that for curing the associated diseases. Thus, chemical control remains the most effective tool for mosquito. Due to the long-term intensive use of insecticides to control mosquito vectors, resistance to most chemical insecticides has been reported. This study aimed to investigate the relationship between insecticide resistance and target site mutation of L1014 kdr and G119 ace alleles in 5 species/species group of mosquitoes (Aedes vexans, Ae. albopictus, Anopheles spp., Culex pipiens complex, and Cx. tritaeniorhynchus) obtained from 6 collection sites. For Anopheles spp., the proportion of mosquitoes with mutated alleles in L1014 was 88.4%, homozygous resistant genotypes were observed in 46.7%, and heterozygous resistant genotypes were observed in 41.8%. For the Cx. pipiens complex and Cx. tritaeniorhynchus species, homozygous resistant genotypes were found in 25.9% and 9.8%, respectively. However, target site mutation of L1014 in the Ae. vexans nipponii and Ae. albopictus species was not observed. Anopheles spp., Cx. pipiens complex, and Cx. tritaeniorhynchus mosquitoes were resistant to deltamethrin and chlorpyriphos, whereas Ae. vexans nipponii and Ae. albopictus were clearly susceptible. We also found a correlation between the resistance phenotype and the presence of the L1014 kdr and G119 ace mutations only in the Anopheles spp. population. In this study, we suggest that insecticide resistance poses a growing threat and resistance management must be integrated into all mosquito control programs.

• 전자공학회논문지
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• 제50권10호
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• pp.67-75
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• 2013

본 논문에서는 RSD(Raised Source/Drain)구조를 가지는 FinFET에서 3차원적 전류 흐름을 고려한 소스와 드레인의 해석적 저항모델을 제시한다. FinFET은 Fin을 통해 전류가 흐르기 때문에 소스/드레인의 기생저항이 크고 채널을 포함한 전체저항에서 중요한 부분을 차지한다. 제안하는 모델은 3차원적 전류흐름을 고려하여 contact부터 channel 직전 영역까지의 소스/드레인 저항을 나타내며 contact저항과 spreading저항의 합으로 이루어져 있다. Contact저항은 전류의 흐름을 고려한 가이드라인을 통해 작은 저항의 병렬합으로 모델링되고 spreading저항은 적분을 통해 구현했다. 제안된 모델은 3D numerical solver인 Raphael의 실험결과를 통해 검증했다. 본 연구에서 제안된 기생저항 모델을 BSIM-CMG와 같은 압축모델에 구현하여 DC 및 AC 성능 예측의 정확도를 높일 수 있을 것이다.

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.208-211
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• 1999

Abstract - Electrical characteristics or asymmetric n-MOSFET's with different source and drain geometry are experimently investigated using test structures having various gate width. Saturation drain current and resistance in linear region are estimated by a simple schematic model, which consists of conventional device having parasitic resistor. A comparison of experimental results of symmetric and asymmetric devices gives the parasitic resistance caused by abnormal device structure. The suggested model shows good agreement with the measured drain current for both forward- and reverse-modes.