1 |
L. A. Clevenger, J. M. E. Harper, C. Cabral Jr., C. Nobili, G. Ottaviani, and R. Mann, "Kinetic analysis of C49- and C54- formation at rapid thermal annealing rates", Journal of Applied Physics, Vol. 72, p. 4978, 1992
|
2 |
C. J. Tsai, P. L. Chung, and K. H. Yu, "Stress evolution of Ni/Pd/Si reaction system under isochronal annealing", Thin Solid Film, Vol. 365, No. 1, p. 72, 2000
DOI
ScienceOn
|
3 |
H. Iwai, T. Ohguro, and S. Ohmi, "NiSi salicide technology for scaled CMOS", Microelectronic Engineering, Vol. 60, No. 1-2, p. 157, 2002
DOI
ScienceOn
|
4 |
S.-Y. Jung, Y.-J. Kim, W.-J. Lee, Y.-Y Zhang, Z. Zhong, S.-G. Li, I.-H. Kang, G.-W. Lee, J.-S. Wang, H.-D. Lee, Y.-C. Kim, J.-Y. Kim, and H. Ryu, "Characterization of the dopant dependence of Nisilicide on a SOI substrate for a nano-scale CMOSFET", Journal of Korean Physics Society, Vol. 50, p. 1883, 2007
DOI
ScienceOn
|
5 |
Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda, "Lowtemperature formation of epitaxial layers with solid-phase reaction in Ni/Ti/Si(001) systems", Japanese Journal of Applied Physics, Part I, Vol. 41, p. 2450, 2002
DOI
|
6 |
T. Ohguro, S. Nakamura, M. Koike, T. Morimoto, A. Nishiyama, Y. Ushiku, T. Yoshitomi, M. Ono, M. Saito, and H. Iwai, "Improvement of junction leakage of nickel silicide junction by a Ti-capping layer", IEEE Trans. Electronic Device, Vol. 41, No. 11, p. 2305, 1999
|
7 |
D. X. Xu, S. R. Das, C. J., Peters, and L. E. Erickson, "Material aspects of nickel silicide for ULSI application", Thin Solid Films, Vol. 326, p. 143, 1998
DOI
ScienceOn
|
8 |
R. Bayers and R. Sinclair, "Metastable phase formation in Titanium-silicon thin films", Journal of Applied Physics, Vol. 57, p. 5240, 1985
DOI
|
9 |
E. Maillard-Schaller, B. I. Boyanov, S. English, and R. J. Nemanich, "Role of the substrate strain in the sheet resistance stability of NiSi deposition on Si(100)", Journal of Applied Physics, Vol. 85, p. 3614618, 1999
|
10 |
A. R. Choi, S. S. Choi, J. H. Kim, H. D. Yang, J. W. Yang, J. Y. Kim, K. H. Shim, S. H. Kim, S. H. Lee, and J. L. Lee, "Nickel-based germanosilicide of for various doping concentrations and rapid thermal annealing conditions", Journal of Korean Physics Society, Vol. 49, p. 800, 2006
|