• Title/Summary/Keyword: Oxide Semiconductor

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광에너지를 활용한 선택적 산화그래핀의 환원 (Selective Graphene Oxide Reduction Utilizing Photon Energy)

  • 신재수;최은미
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.16-20
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    • 2018
  • Graphene is attracting attention due to its outstanding properties as line material for next-generation semiconductor. Graphene pattern technology is essential to apply graphene line. Selective graphene oxide reduction as one of graphene pattern method does not require a substrate thereby a high flexibility device can be applied. Particularly, the method using photon energy has advantages of short process time and environment friendly. In this review, we introduce the photocatalytic method and the photo-thermal energy conversion method using photon energy in the selective reduction process of graphene oxides.

스프레이 공정을 이용한 nc-ZnO/ZnO 전계효과트랜지스터 제작 및 특성 분석 (The Study of nc-ZnO/ZnO Field-effect Transistors Fabricated by Spray-pyrolysis Process)

  • 조준희
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.22-25
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    • 2022
  • Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

스프레이 공정을 이용한 nc-ZnO/ZnO 전계효과트랜지스터의 광학적 노출에 대한 열화 현상 분석 (The Instability Behaviors of Spray-pyrolysis Processed nc-ZnO/ZnO Field-effect Transistors Under Illumination)

  • 조준희
    • 반도체디스플레이기술학회지
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    • 제22권1호
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    • pp.78-82
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    • 2023
  • Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

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산화막 증착을 통한 이중스크린 3D 프로젝션 디스플레이 스크린용 산란형 편광필름의 편광유지도 개선 (Improvement of Polarization Maintenance Property of Scattering Polarizer Film for Double-Screen 3D Projection Display Screen Applications Via Surface Oxide Deposition)

  • 김대연;서종욱
    • 반도체디스플레이기술학회지
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    • 제11권4호
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    • pp.1-6
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    • 2012
  • Keeping the polarization direction of the projection light unchanged is of crucial importance for high quality of images on a double-screen 3D projection display system. It has been found that the deposition of oxide layers on the surfaces of scattering polarizer film results in an improvement of polarization maintenance property of the film. The secondary image formed on the front screen by the light scattered from the rear screen decreases by 30% through the application of oxide layers on both surfaces of the screen. Since the oxide layer can also be used as an anti-reflection (AR) coating of the film, this method is very effective for the projection display applications.

황산 용액에서 Al 산화피막의 생성과정 연구 (Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution)

  • 천정균;김연규
    • 대한화학회지
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    • 제54권4호
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    • pp.380-386
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    • 2010
  • 황산 용액에서 양극산화(anodization)에 의하여 생성되는 산화피막의 생성과정(growth kinetics)과 이 피막의 전기적 성질을 전기화학적 임피던스 측정법(electrochemical impedance spectroscopy)으로 조사하였다. 산화피막은 $Al_2O_3$로 점-결함 모형(point defect model)에 따라 성장하였으며, n-형 반도체의 전기적 성질을 보였다.

Extraction of Exact Layer Thickness of Ultra-thin Gate Dielectrics in Nanoscaled CMOS under Strong Inversion

  • Dey, Munmun;Chattopadhyay, Sanatan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제10권2호
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    • pp.100-106
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    • 2010
  • The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor

  • Park, Y.K.;Y.S. Ahn;Lee, K.H.;C.H. Cho;T.Y. Chung;Kim, Kinam
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권2호
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    • pp.76-82
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    • 2003
  • The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

W CMP 공정에서 abrasive size 와 shape 영향성 (The effect of abrasive size and shape on W CMP)

  • 박준상;박정헌;이재동;홍창기;조한구;문주태;류병일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.243-246
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    • 2004
  • W CMP 공정에서 abrasive 의 size 및 shape 에 따른 CMP 거동에 대해 관찰하였으며, 주요 제거 막질인 W 막질과 stopping layer 로 사용되는 Oxide 막질에 대한 압력(P)과 상대 속도(V) 영향성을 관찰하였다. CMP 제거량이 입자의 size 변화에 의존한다는 기존의 이론과는 달리 응집도(aggregate ratio) 변화가 주요 변수임을 밝혀 내었다. 한편, 각 막질에 대한 P,V 영향성 평가를 통해, 변형된 Prestonian equation 이 abrasive size 및 shape 에 상관없이 W 막질의 제거 거동을 설명하는데 중요한 역할을 수행함을 보였다. 그렇지만, W CMP 공정에서 stopping layer 로 사용되는 oxide 막질의 거동을 설명하는 데에는 어려움이 있었으며, 특히 P,V 에 의한 비선형적 removal rate(RR) 거동발생으로 인해 기존의 이론치와는 많은 차이를 나타내었다. 또한, abrasive size 와 shape 에 따라서도 복잡한 거동을 나타낸다.

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무수 불화수소와 메탄올의 기상식각에 의한 실리콘 표면 미세 가공 (Silicon Surface Micro-machining by Anhydrous HF Gas-phase Etching with Methanol)

  • 장원익;최창억;이창승;홍윤식;이종현;백종태;김보우
    • 센서학회지
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    • 제7권1호
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    • pp.73-82
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    • 1998
  • 실리콘 표면 미세가공에 있어서, 새로 개발된 HF 기상식각 공정은 미소구조체들을 띄우는데 매우 효과적임을 입증하였다. 무수 불화수소와 메탄올을 이용한 기상식각 시스템에 대한 기능 및 특성을 기술하였고, 실리콘 미세구조체룰 띄우기 위한 회생층 산화막들의 선택적 식각특성이 고찰되었다. 구조체층으로는 인이 주입된 다결정실리콘이나 SOI 기판의 단결정실리콘을 사용하였다. 회생층으로는 TEOS 산화막, 열산화막, 저온산화막을 사용하였다. 기존 습식식각과 비교해 볼 때, 공정에 기인된 고착현강이나 잔류물질이 없는 미세구조체를 성공적으로 제작하였다.

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일산화질소 가스 검출을 위한 CuO 박막/ZnO 나노막대 이종접합 구조의 제작 및 특성 평가 (Fabrication and Characterization of CuO Thin Film/ZnO Nanorods Heterojunction Structure for Efficient Detection of NO Gas)

  • 유환수;김효진;김도진
    • 한국재료학회지
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    • 제28권1호
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    • pp.32-37
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    • 2018
  • We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.