Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지

Silicon Surface Micro-machining by Anhydrous HF Gas-phase Etching with Methanol

무수 불화수소와 메탄올의 기상식각에 의한 실리콘 표면 미세 가공

  • Jang, W.I. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Choi, C.A. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Lee, C.S. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Hong, Y.S. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Lee, J.H. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Baek, J.T. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute) ;
  • Kim, B.W. (Semiconductor Technology Division, Electronics and Telecommunications Research Institute)
  • 장원익 (한국전자통신연구원 반도체연구단) ;
  • 최창억 (한국전자통신연구원 반도체연구단) ;
  • 이창승 (한국전자통신연구원 반도체연구단) ;
  • 홍윤식 (한국전자통신연구원 반도체연구단) ;
  • 이종현 (한국전자통신연구원 반도체연구단) ;
  • 백종태 (한국전자통신연구원 반도체연구단) ;
  • 김보우 (한국전자통신연구원 반도체연구단)
  • Published : 1998.01.31
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Abstract

In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and $CH_{3}OH$ vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthdsilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced striction and residual product.

실리콘 표면 미세가공에 있어서, 새로 개발된 HF 기상식각 공정은 미소구조체들을 띄우는데 매우 효과적임을 입증하였다. 무수 불화수소와 메탄올을 이용한 기상식각 시스템에 대한 기능 및 특성을 기술하였고, 실리콘 미세구조체룰 띄우기 위한 회생층 산화막들의 선택적 식각특성이 고찰되었다. 구조체층으로는 인이 주입된 다결정실리콘이나 SOI 기판의 단결정실리콘을 사용하였다. 회생층으로는 TEOS 산화막, 열산화막, 저온산화막을 사용하였다. 기존 습식식각과 비교해 볼 때, 공정에 기인된 고착현강이나 잔류물질이 없는 미세구조체를 성공적으로 제작하였다.

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