1 |
Pacelli A, Spinelli A S, Perron L M. Carrier Quantization at Flat Bands in MOS Devices. IEEE Trans. Electron Devices 1999; 46: 383-87.
DOI
ScienceOn
|
2 |
SILVACO International, SILVACO, USA.
|
3 |
Sze S M. Physics of semiconductor devices. 2nd ed. John Wiley & Sons, Inc; 1985.
|
4 |
Stern F. Self Consistent Results for n-Type Si Inversion Layers. Phy.Rev.1972; 5:4891-99.
DOI
|
5 |
Maiti CK, Chattopadhyay S, Bera LK. Strained Si Heterostructure Field Effect Devices, Taylor and Francis; 2007.
|
6 |
2007 Edition of the ITRS, http://public.itrs.net
|
7 |
Stern F, Howard W E. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit. Phy. Rev.1967; 163:816-35.
DOI
|
8 |
Lopez-Villanuevap J A, Cartujo-Casinello, Banqueri J, Gamiz F, Rodriquez S. Effects of the inversion layer centroid on MOSFET behavior. IEEE Trans. Electron Devices 1997; 44:1915-22.
DOI
ScienceOn
|
9 |
Y. Tsividis. Operation and Modeling of the MOS Transistors. 2nd Edition. Oxford University Press; 2004.
|
10 |
Hareland S A, Krishnamrthy S, Jallepalli S, Yeap Choh-Fei , Hasnat K, Tasch Al F , Maziar C M . A Computationally Efficient Model for Inversion Layer Quantization Effects in Deep Submicron N-Channel MOSFET’s. IEEE Trans. Electron Devices 1996; 43: 90-6.
DOI
ScienceOn
|