• 제목/요약/키워드: Non volatile memory device

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AUTOSAR 플랫폼 기반 CDD를 활용한 비휘발성 메모리 수명 연장 기법 (A Non-volatile Memory Lifetime Extension Scheme Based on the AUTOSAR Platform using Complex Device Driver)

  • 신주석;손정호;이은령;오세진;안광선
    • 대한임베디드공학회논문지
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    • 제8권5호
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    • pp.235-242
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    • 2013
  • Recently, the number of automotive electrical and electronic system has been increased because the requirements for the convenience and safety of the drivers and passengers are raised. In most cases, the data for controlling the various sensors and automotive electrical and electronic system used in runtime should be stored on the internal or external non-volatile memory of the ECU(Electronic Control Units). However, the non-volatile memory has a constraint with write limitation due to the hardware characteristics. The limitation causes fatal accidents or unexpected results if the non-volatile memory is not managed. In this paper, we propose a management scheme for using non-volatile memory to prolong the writing times based on AUTOSAR(AUTOmotive Open System Architecture) platform. Our proposal is implemented on the CDD(Complex Device Driver) and uses an algorithm which swaps a frequently modified block for a least modified block. Through the development of the prototype, the proposed scheme extends the lifetime of non-volatile memory about 1.08 to 2.48 times than simply using the AUTOSAR standard.

나노미터 MOSFET비휘발성 메모리 소자 구조의 탐색 (Feasibility Study of Non-volatile Memory Device Structure for Nanometer MOSFET)

  • 정주영
    • 반도체디스플레이기술학회지
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    • 제14권2호
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    • pp.41-45
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    • 2015
  • From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory

  • Lee, Su-Youn;Jeong, Jeung-Hyun;Cheong, Byung-Ki
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.1-10
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    • 2008
  • The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.

Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

  • Park, Youn-Jung;Jeong, Hee-June;Chang, Ji-Youn;Kang, Seok-Ju;Park, Cheol-Min
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.51-65
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    • 2008
  • The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

A Novel Memory Hierarchy for Flash Memory Based Storage Systems

  • Yim, Keno-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권4호
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    • pp.262-269
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    • 2005
  • Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment

  • 윤장원;장진녕;홍문표
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.192.1-192.1
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    • 2015
  • We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

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Pt 나노입자와 Hybrid Pt-$SiO_2$ 나노입자의 합성과 활용 및 입자박막 제어 (Synthesis and application of Pt and hybrid Pt-$SiO_2$ nanoparticles and control of particles layer thickness)

  • 최병상
    • 한국전자통신학회논문지
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    • 제4권4호
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    • pp.301-305
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    • 2009
  • Pt 나노입자의 합성과 이를 이용한 hybrid Pt-$SiO_2$ 나노입자의 합성을 성공적으로 수행하였으며, self-assembled Pt nanoparticles monolayer를 charge trapping layer로 활용하는 metal-oxide-semiconductor(MOS) type memory의 한 예로 non-volatile memory(NVM)의 응용을 보임으로써 나노입자의 활용 가능성을 보이고, 또한, hybrid Pt-$SiO_2$ 나노입자 박막 층의 제어를 통한 MOS type memory device에의 보다 더 넓은 활용 가능성을 보이고자 하였다.

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이온젤 전해질 절연체 기반 고분자 비휘발성 메모리 트랜지스터 (Ion Gel Gate Dielectrics for Polymer Non-volatile Transistor Memories)

  • 조보은;강문성
    • 한국전기전자재료학회논문지
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    • 제29권12호
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    • pp.759-763
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    • 2016
  • We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

MRAM Technology for High Density Memory Application

  • Kim, Chang-Shuk;Jang, In-Woo;Lee, Kye-Nam;Lee, Seaung-Suk;Park, Sung-Hyung;Park, Gun-Sook;Ban, Geun-Do;Park, Young-Jin
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권3호
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    • pp.185-196
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    • 2002
  • MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.