References
- S. Ducharme, T. J. Reece, C. M. Othon, and R. K. Rannow, 'Ferroelectric polymer Langmuire-Blodgett films for nonvolatile memory applications,' IEEE Transaction on Device and Materials Reliability, vol. 5, no. 4, pp. 720-735, Dec. 2005 https://doi.org/10.1109/TDMR.2005.860818
- N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N.Y. Park, G. B. Stephenson, I. Stolitchnov, A.K. Taganstev, D.V. Taylor, T. Yamada, and S. Streiffer, 'Ferroelectric thin films: review of materials, properties, and applications,' Journal of Applied Physics, vol. 100, Sep. 2006
- A. Sheikholeslami and P. G. Gulak, 'A Survey of circuit innovations in ferroelectric random-access memories,' Proceedings of the IEEE, vol. 88, no. 5, pp. 667-689, May 2000 https://doi.org/10.1109/5.849164
- T. Sumi, N. Moriwaki, G. Nakane, T. Nakakuma, Y. Judai, Y. Uemoto, Y. Nagano, S. Hayashi, M. Azuma, E. Fujii, S.I. Katsu, T. Otsuki, L. McMillan, C. Paz de Araujo, and G. Kano, 'A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns,' Digest of Technological Paper - IEEE International Solid-State Circuits Conference, pp. 268-269, Feb. 1994
- S. S. Eaton, D. B. Butler, M. Parris, D. Wilson, and H. McNeillie, 'A ferroelectric nonvolatile memory,' Digest of Technological Paper - IEEE International Solid-State Circuits Conference, vol. 130, pp. 130-131, Feb. 1988
- J. Evans and R. Womack, 'An experimental 512-bit nonvolatile memory with ferroelectric storage cell,' IEEE Journal of Solid-State Circuits, vol. 23, pp. 1171-1175, no. 5, Oct. 1988 https://doi.org/10.1109/4.5940
- R. Womack and D. Tolsch, 'A 16 kb Ferroelectric nonvolatile memory with a bit parallel architecture,' Digest of Technological Paper - IEEE International Solid-State Circuits Conference, vol. 351, pp. 242-243, Feb. 1989
- T. Hayashi, Y. Igarashi, D. Inomata, T. Ichimori, T. Mitsuhashi, K. Ashikaga, T. Ito, M. Yoshimaru, M. Nagata, S. Mitarai, H. Godaiin, T. Nagahama, C. Isobe, H. Moriya, M. Shoji, Y. Ito, H. Kuroda, and M. Sasaki, 'A novel stack capacitor cell for high density FeRAM compatible with CMOS logic,' Technology Digest - IEEE International Electron Devices Meet., pp. 543-546, Dec. 2002
- H. McAdams, R. Acklin, T. Blake, D. Xiao-Hong, J. Eliason, J. Fong, W.F. Kraus, D. Liu, S. Madan, T. Moise, S. Natarajan, Ning Qian, Yunchen Qiu, K.A. Remack, K.A. J. Rodriguez, Roscher, A. Seshadri, and S.R. Summerfelt, 'A 64-Mb embedded FRAM utilizing a 130-nm 5LM Cu/FSG logic process,' IEEE Journal of Solid-State Circuits, vol. 39, no. 1, pp. 667-677, Apr. 2004 https://doi.org/10.1109/JSSC.2004.825241
- T.S.Moise, S. R. Summerfelt, H. McAdams, S. Aggarwal, K.R. Udayakumar, F.G. Celii, J.S. Martin, G. Xing, L. Hall, K.J. Taylor, T.Hurd, J. Rodriguez, K. Remack, M.D. Khan, K. Boku, G. Stacey, M. Yao, M.G.Albrecht, E. Zielinski, M. Thakre, S. Kuchimanchi, A. Thomas, B. McKee, J. Rickes, A. Wang, J. Grace, J. Fong, D. Lee, C. Pietrzyk, R. Lanham, S.R. Gilbert, D. Taylor, J. Amano, R. Bailey, F. Chu, G. Fox, S. Sun, and T. Davenport, 'Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process,' Technology Digest - IEEE International Electron Devices Meet., pp. 535-538, Dec. 2002
-
K. Sugibuchi, Y. Kurogi, and N. Endo, 'ferroelectric field-effect memory device using
$Bi_4Ti_3O_{12}$ film,' Journal of Applied Physics, vol. 46, no. 7, pp 2877-2881, Jul. 1975 https://doi.org/10.1063/1.322014 - A. Kingon, P. Muralt, N. Setter, and R. Waser, 'Ceramic materials for electronics,' edited by R. E. Buchanan (Dekker, New York), pp. 465-526, 2004
- H. T. Lue, C. J. Wu, and T. Y. Tseng, 'Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory,' Ultrasonics, Ferroelectrics and Frequency Control, vol. 5, no. 1, pp. 5-14, Jan. 2003
- S. L. Miller and P. J. McWhorter, 'Physics of the ferroelectric nonvolatile memory field effect transistor,' Journal of Applied Physics, vol. 72, no. 12, pp. 5999-6010, Dec. 1992 https://doi.org/10.1063/1.351910
- S. H. Lim, A. C. Rastogi, and S. B. Desu, 'Electrical properties of metal-ferroelectricinsulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application,' Journal of Applied Physics, vol. 96, no. 10, pp. 5673-5682, Nov. 2004 https://doi.org/10.1063/1.1785836
- I. M. Ross, 'Semiconductive translating device,' U.S. Patent, no. 2791760, 1957
- J. L. Moll and Y. Tarui, 'A new solid state memory resistor,' IEEE Transactions on Electron Devices, ED-10, pp. 338, Sep. 1963
- S. Y. Wu, 'A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor,' IEEE Transactions on Electron Devices, ED-21, pp. 499-504, Aug. 1974
- Y. Arimoto and H. Ishiwara, 'Current status of ferroelectric random-access memory,' MRS Bulletin., vol. 29, no. 11, pp. 823-828, Nov. 2004 https://doi.org/10.1557/mrs2004.235
- H. Ishiwara, Material Research Society Symposium Proc., vol. 596, pp427, 2000
- K. Takahashi, K. Manabe, A. Morioka, T. Ikarashi, T. Yoshihara, H. Watanabe, and T. Tatsumi, Abstracts of the International Conference Solid State Devices and Materials (Tokyo)(unpublished) no. 1-2, 2004
- H. Kohlstedt and H. Ishiwara, 'In nanoelectronics and information technology: advanced electronic materrial and novel devices,' edited by R. Waser (Wiley-VCH, Weinheim) , pp. 387, 2002
- Q. M. Zhang, H. Xu, F. Fang, Z.-Y. Cheng, and F. Xia, 'Critical Thickness of Crystallization and Discontinuous Change in Ferroelectric Behavior with Thickness in Ferroelectric Polymer Thin Films,' Journal of Applied Physics, vol. 89, no. 5, pp. 2613-2616, Mar. 2001 https://doi.org/10.1063/1.1344585
- F. Xia, H. Xu, F. Fang, B. Razavi, Z.-Y. Cheng, Y. Lu, B. Xu, and Q. M. Zhang, 'Thickness dependence of ferroelectric polarization switching in poly(vinylidene fluoride?trifluoroethylene) spin cast films,' Applied Physics Letters, vol. 78, no. 8, pp. 1122-1124, Feb. 2001 https://doi.org/10.1063/1.1351848
- Q. Gao and J. I. Scheinbeim, 'Dipolar intermolecular interactions, structural development, and electromechanical properties in ferroelectric polymer blends of nylon-11 and poly(vinylidene fluoride),' vol. 33, no. 20, pp. 7564-7572, Sep. 2000 https://doi.org/10.1021/ma000111i
- Y. Tajitsu, K. Ishida, S. Kanbara, H. Ohigashi, M. Date, and E. Fukada, 'Temperature dependence of switching characteristics in polyurea-5 thin films,' Japanese Journal of Applied Physics, vol. 37, no. 9B, pp. 5375-5378, Sep. 1998 https://doi.org/10.1143/JJAP.37.5375
- T. T. Wang, J. M. Herbert, and A. M. Glass, 'The applications of ferroelectric polymers Glasgow,' (Blackie, U.K.), 1988
- H. S. Nalwa, 'Ferroelectric polymer' (Marcel Dekker, New York) , pp. 895, 1995
- A. J. Lovinger, 'Poly(vinylidene fluoride) developments in crystalline polymers?I' (D. C. Basset, Ed. London, U.K.: Applied Sciences) , pp. 195-273, 1981
- T. Furukawa, 'Ferroelectric properties of vinylidene fluoride copolymers,' Phase Transit., vol. 18, no. 3-4, pp. 143-211, 1989 https://doi.org/10.1080/01411598908206863
- R. G. Kepler and R. A. Anderson, 'Ferroelectric polymers,' Advanced in Physics, vol. 41, no. 1, pp. 1-57, Jan./Feb. 1992 https://doi.org/10.1080/00018739200101463
- R. G. Kepler and R. A. Anderson, 'Ferroelectricity in polyvinylidene fluoride,' Journal of Applied Physics, vol. 49, no. 3, pp. 1232-1235, Mar. 1978 https://doi.org/10.1063/1.325011
- R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. de Leeuw, 'Highperformance solution-processed polymer ferroelectric field-effect transistors,' Nature Materials, vol. 4, no. 3, pp. 243-248, Mar. 2005 https://doi.org/10.1038/nmat1329
- A. J. Lovinger, 'Ferroelectric transition in a copolymer of vinylidene fluoride and tetrafluoroethylene,' Macromolecules, vol. 16, no. 9, pp. 1529-1534, Jan. 1983 https://doi.org/10.1021/ma00243a021
- K. Noda, K. Ishida, T. Horiuchi, K. Matsushige, and A. Kubono, 'Structures of vinylidene fluoride oligomer thin films on alkali halide substrate,' Journal of Applied Physics, vol. 86, no. 7, pp. 3688-3693, Oct. 1999 https://doi.org/10.1063/1.371279
- K. Noda, K. Ishida, A. Kubono, T. Horiuchi, H. Yamada, and K. Matsushige, 'Structures and ferroelectric natures of epitaxially grown vinylidene fluoride oligomer thin films,' Japanese Journal of Applied Physics, vol. 39, no. 11, pp. 6358-6363, Nov. 2000 https://doi.org/10.1143/JJAP.39.6358
- A.C. Rastogi and S.B. Desu, 'Ferroelectric poly(vinylidene fluoride) thin film grown by lowpressure chemical vapor polymerization,' Chemical Vapor Deposition, vol. 12, pp. 742-750, Dec. 2006 https://doi.org/10.1002/cvde.200606505
- A.V. Bune, V.M. Fridkin, S. Ducharme, L.M. Blinov, S.P. Palto, A.V. Sorokin, S.G. Uudin, and A. Zlatkin, 'Two-dimensional ferroelectric films,' Nature, vol. 391, pp. 874-877, Feb. 1998 https://doi.org/10.1038/36069
- F. Xia and Q. M. Zhang, 'Schottky emission at the metal polymer interface and its effect on the polarization switching of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymer thin films,' Applied Physics Letters, vol. 85, no. 10, pp. 299-306, Sep. 2004 https://doi.org/10.1063/1.1772859
- G. Zhu, Z. Zeng, L. Zhang, and X. Yan, 'Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films,' Applied Physics Letters, vol. 89, pp. 102905-1-10292905-3, Sep. 2006 https://doi.org/10.1063/1.2340080
- Y. J. Park, S. J. Kang, C. Park, K. J. Kim, H. S. Lee, M. S. Lee, U. Chung, and I. J. Park, 'Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization,' Applied Physics Letters, vol. 88, pp. 242908-1-242908-3, Sep. 2006 https://doi.org/10.1063/1.2207831
- H. Xu, J. Zhong, X. Liu, J. Chen, and D. Shen, 'Ferroelectric and switching behavior of poly (vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with polypyrrole interface,' Applied Physics Letters, vol. 90, pp. 092903-1-092903-3, Mar. 2007 https://doi.org/10.1063/1.2710477
- Y. J. Park, S. J. Kang, C. Park, E. Woo, K. Shin, and K. J. Kim, 'Recovery of remanent polarization of poly(vinylidene fluoride-trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode,' Applied Physics Letters, vol. 90, pp. 222903-1-222903-3, May 2007 https://doi.org/10.1063/1.2743389
- Y. J. Park, S. J. Kang, C. Park, B. Lotz, A. Thierry, K. J. Kim, and J. Huh, 'molecular and crystalline microstructure of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) ultrathin films on bare and self-assembled monolayermodified Au Substrates,' Macromolecules, vol. 41, no. 1, pp. 109 - 119, Oct. 2008 https://doi.org/10.1021/ma0718705
- T. J. Reece, S. Ducharme, A. V. Sorokin, and M. Poulsen, 'Nonvolatile memory element based on a ferroelectric polymer Langmuir?Blodgett film,' Applied Physics Letters, vol. 82, no. 1, pp. 142-144, Jan. 2003 https://doi.org/10.1063/1.1533844
- S. Fujisaki, H. Ishiwara, and Y. Fujisaki, 'Lowvoltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes,' Applied Physics Letters, vol. 90, pp. 162902-1 - 162902-3, Apr. 2007 https://doi.org/10.1063/1.2723678
- R. Schroeder, L. A. Majewski, and M. Grell, 'Allorganic permanent memory transistor using an amorphous, spin-cast ferroelecric-like gate insulator,' Advanced Materials, vol. 16, no. 7, pp. 633-636, Apr. 2004 https://doi.org/10.1002/adma.200306187
- K. N. N. Unni, R. de Bettignies, S. Dabos-Seignon, and J. Nunzi, 'A nonvolatile memory element based on an organic field-effect transistor,' Applied Physics Letters, vol. 85, no. 10, pp. 1823 - 1825, Sep. 2004 https://doi.org/10.1063/1.1788887
- Y. Matsuo, T. Ijicji, H. Yamada, J. Hatori, and S. Ikehata, 'Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene,' Central Eurpean Journal of Physics, vol. 2, no.2, pp. 357-366, Jan. 2004 https://doi.org/10.2478/BF02475636
- R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. D. Leeuw, 'Highperformance solution-processed polymer ferroelectric field-effect transistor,' Nature Materials, vol. 4, pp.243 - 2005, Feb. 2005 https://doi.org/10.1038/nmat1329
- R. C. G. Naber, P. W. M. Blom, A.W. Marsman, and D. M. de Leeuw, 'Low voltage switching of a spin cast ferroelectric polymer,' Applied Physics Letters, vol. 85, pp. 2032-2034, Jul. 2004 https://doi.org/10.1063/1.1788885
- F. A. Yildirim, C. Ucurum, R. R. Schliewe, R. M. Meixner, H. Goebel, and W. Krautschneider, 'Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors,' Applied Physics Letters, vol. 90, pp. 083501-1-083501-3, Feb. 2007 https://doi.org/10.1063/1.2591314
- S. H. Noh, W. Choi, M. S. Oh, D. K. Hwang, K. Lee, S. Im, S. Jang, and E. Kim, 'ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators,' Applied Physics Letters, vol. 90, pp. 253504-1-253504-3, Jun. 2007 https://doi.org/10.1063/1.2749841
- S. J. Kang, Y. J. Park, J. Sung, P. S. Jo, C. Park, K. J. Kim, and B. O. Cho, 'Spin cast ferroelecric beta poly(vinylidene fluoride) thin films via rapid thermal annealing,' Applied Physics Letters, vol. 92, pp. 012921-1-012921-1, Jan. 2008 https://doi.org/10.1063/1.2830701
-
Wang, J. Li, H. Liu, J. Duan, Y. Jiang, and S. Yan, 'On the
$\alpha$ $\rightarrow$ $\beta$ transition of carbon-coated highly oriented PVDF ultrathin film induced by melt recrystallization,' Journal of the American Chemical Society, vol. 125, no. 6, pp.1496-1497 https://doi.org/10.1021/ja029352r - S. J. Kang, Y. J. Park, J. Hwang, H. J. Jeong, J. S. Lee, K. J. Kim, H. Kim, J. Huh, and C. Park, 'Localized pressure-induced ferroelectric pattern arrays of semicrystalline poly(vinylidene fluoride) by microimprinting,' Advanced Materials, vol. 19, no. 4, pp. 581-586, Feb. 2007 https://doi.org/10.1002/adma.200601474
- Z. Hu, G. Baralia, V. Bayot, J.-F. Gohy, and A. M. Jonas, 'Nanoscale control of polymer crystallization by nanoimprint lithography,' Nano Letters, vol. 5, no. 9, pp. 1738-1743, Jul. 2005 https://doi.org/10.1021/nl051097w
- Y. J. Park, Y. S. Kang, and C. Park, 'Micropatterning of semicrystalline poly(vinylidene fluoride) (PVDF) solutions,' European Polymer Journal, vol. 41, pp. 1002-1012, Jan. 2005 https://doi.org/10.1016/j.eurpolymj.2004.11.022
- L. Zhang, S. Ducharme, and J. Li, 'Microimprinting and ferroelectric properties of poly(vinylidene fluoride-trifluoroethylene) copolymer films,' Applied Physics Letters, vol. 91, pp. 172906-1-172906-3, Oct. 2007 https://doi.org/10.1063/1.2800803
- K. Kimura, K. Kobayashi, H. Yamada, and K. Matsushige, 'investigation of molecular chain orientation change of polymer crystals in phase transitions by friction anisotropy measurement,' Langmuir, vol. 23, no. 9, pp. 4740-4745, Feb. 2007 https://doi.org/10.1021/la063270p
Cited by
- High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory vol.22, pp.14, 2012, https://doi.org/10.1002/adfm.201200290
- Non-volatile organic memory with sub-millimetre bending radius vol.5, pp.2041-1723, 2014, https://doi.org/10.1038/ncomms4583
- Nanoscale memory devices vol.21, pp.41, 2010, https://doi.org/10.1088/0957-4484/21/41/412001
- Fabrication and Electrical Properties of P(VDF-TrFE)/Bi3.5Nd0.5Ti3O12 Bi-Layer Composite Ferroelectric Thin Films vol.320, pp.1662-8985, 2011, https://doi.org/10.4028/www.scientific.net/AMR.320.170
- Dependence of Ferroelectric Film Formation Method on Electrical Characteristics in Solution-processed Ferroelectric Field Effect Transistor vol.50, pp.7, 2013, https://doi.org/10.5573/ieek.2013.50.7.102
- High temperature-dependent imprint and switching mechanism of poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with electroactive interlayers vol.106, pp.2, 2015, https://doi.org/10.1063/1.4905895