Browse > Article
http://dx.doi.org/10.5573/JSTS.2008.8.1.001

Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory  

Lee, Su-Youn (Korea Institute of Science and Technology)
Jeong, Jeung-Hyun (Korea Institute of Science and Technology)
Cheong, Byung-Ki (Korea Institute of Science and Technology)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.8, no.1, 2008 , pp. 1-10 More about this Journal
Abstract
The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.
Keywords
Non-volatile; phase-change memory; phase-change material; scalability; device speed;
Citations & Related Records
연도 인용수 순위
  • Reference
1 M. Gill, T. Lowrey, and J. Park, ISSCC Dig. Tech. Papers, p. 202, 2002
2 S. Kang, W.Y. Cho, B.-H. Cho, K.-J. Lee, C.-S. Lee, H.-R. Oh, B.-G. Choi, Q. Wang, H.-J. Kim, M.-H. Park, Y.H. Ro, S. Kim, C.-D. Ha, K.-S. Kim, Y.-R. Kim, D.-E. Kim, C.-K. Kwak, H.-G. Byun, G. Jeong, H. Jeong, and K. Kim, IEEE J. Solid-State Circuits, vol. 42, p. 210, 2007   DOI   ScienceOn
3 K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, Jpn. J. Appl. Phys., vol. 42, p. 404, 2003   DOI
4 M.H.R. Lankhorst, L. Pieterson, M. Schijndel, B.A.J. Jacobs, and J.C.N. Rijpers, Jpn J. Appl. Phys. I, vol. 42, p. 863, 2003   DOI
5 J.I. Lee, H. Park, S.L. Cho, Y.L. Park, B.J. Bae, J.H. Park, J.S. Park, H.G. An, J.S. Bae, D.H. Ahn, Y.T. Kim, H. Horii, S.A. Song, J.C. Shin, S.O. Park, H.S. Kim, U-In. Chung, J.T. Moon, and B.I. Ryu, Symposium on VLSI technology, p. 102, 2007
6 S.R. Ovshinsky, Tutorials in MRS Fall Meeting, 2003
7 B. Cheong, J.-h. Jeong, S. Lee, I.H. Kim, W. Zhe, H.W. Ahn, S.C. Kim, H.S. Lee, and Y.W. Park, 'Characteristics of Phase Change Memory Devices based on Ge-doped SbTe and its derivative', European Phase Change and Ovonics Symposium (E*PCOS), 2007
8 S.L. Cho, J.H. Yi, Y.H. Ha, B.J. Kuh, C.M. Lee, J.H. Park, S.D. Nam, H. Horii, B.O. Cho, K.C. Ryoo, S.O. Park, H.S. Kim, U-In. Chung, J.T. Moon, and B.I. Ryu, Symposium on VLSI technology, p. 96, 2005
9 S.H. Lee, Y. Jung, R. Agarwal, Nature Nanotechnol., vol. 2, p. 626, 2007   DOI   ScienceOn
10 S. Lee, J.-h. Jeong, T.S. Lee, W.M. Kim, and B. Cheong, unpublished work
11 K. Nakayama, K. Kojima, F. Hayakawa, Y. Imai, A. Kitagawa, and M. Suzuki, Jpn J. Appl. Phys., vol. 39, p. 6157, 2000   DOI
12 S.J. Ahn, Y.J. Song, C.W. Jeong, J.M. Shin, Y. Fai, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.Y. Lee, J.H. Park, H. Horii, Y.H. Ha, J.H. Yi, B.J. Kuh, G.H. Koh, G.T. Jeong, H.S. Jeong, K. Kim, and B.I. Ryu, IEDM Tech. Dig., p. 907, 2004
13 F. Rao, Z. Song, M. Zhong, L. Wu, G. Feng, B. Liu, S. Feng, and B. Chen, Jpn. J. Appl. Phys., vol. 46, p. L25, 2007   DOI   ScienceOn
14 Y.J. Song, J.H. Park, S.Y. Lee, J.-H. Park, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.J. Ahn, C.W. Jeong, J.M. Shin, W.C. Jeong, K.H. Koh, G.T. Jeong, H.S. Jeong, and K.N. Kim, ESSDERC, p. 513, 2005
15 T. Nirschl, J.B. Philipp, T.D. Happ, G.W. Burr, B. Rajendran, M.-H. Lee, A. Schrott, M. Yang, M. Breitwisch, C.-F. Chen, E. Joseph, M. Lamorey, R. Cheek, S.-H. Chen, S. Zaidi, S. Raoux, Y.C. Chen, Y. Zhu, R. Bergmann, H.-L. Lung, and C. Lam, IEDM Tech. Dig., p. 461, 2007
16 A. Pirovano, F. Pellizzer, I. Tortorelli, R. Harrigan, M. Magistretti, P. Petruzza, E. Varesi, D. Erbetta, T. Marangon, F. Bedeschi, R. Fackenthal, G. Atwood, and R. Bez, ESSDERC, p. 222, 2007
17 N. Takaura, M. Terao, K. Kurotsuchi, T. Yamauchi, O. Tonomura, Y. Hanaoka, R. Takemura, K. Osada, T. Kawahara, and H. Matsuoka, IEDM Tech. Dig., p. 897, 2003
18 M.H.R. Lankhorst, B.W.S.M.M. Ketelaars, and R.A.M. Wolters, Nature Mater., vol. 4, no. 1, 2005
19 A. Pirovano, F. Pellizzer, A. Redaelli, I. Tortorelli , E. Varesi, F. Ottogalli, M. Tosi, P. Besana, R. Cecchini, R. Piva, M. Magistretti, M. Scaravaggi, G. Mazzone, P. Petruzza, F. Bedeschi, T. Marangon, A. Modelli, D. Ielmini, A.L. Lacaita, and R. Bez, ESSDERC, p. 313, 2005
20 Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzaki, S. Hanzawa, M. Terao, N. Takaura, H. Moriya, T. Iwasaki, M. Moniwa, and T. Koga, IEDM Tech Dig., p. 346908.1-4, 2006
21 H.J. Borg, M. Schijndel, J.C.N. Rijpers, M.H.R. Lankhorst, G. Zhou, M.J. Dekker, I.P.D. Ubbens, and M. Kuijper, Jpn J. Appl. Phys. I, vol. 40, p. 1592, 2001   DOI
22 C.J. van der Poel, D.J. Gravesteijn, W.G.V.M. Rippens, H.T.L.P. Stockx, and C.M.J. van Uijen, J. Appl. Phys., vol. 59, p. 1819, 1986   DOI
23 J.H. Oh, J.H. Park, Y.S. Lim, H.S. Lim, Y.T. Oh, J.S. Kim, J.M. Shin, J.H. Park, Y.J. Song, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, J.H. Kim, J. Yu, F. Yeung, C.W. Jeong, J.H. Kong, D.H. Kang, G.H. Koh, G.T. Jeong, H.S. Jeong, and Kinam Kim, IEDM Tech. Dig., p. 1, 2006
24 K. Attenborough, 'Novel cell concept for phase change random access memory', MRS Spring Meeting, San Francisco, CA, USA, April 9-13, 2007
25 Y.C. Chen, C.T. Rettner, S. Raoux, G.W. Burr, S.H. Chen, R.M. Shelby, M. Salinga, W.P. Risk, T.D. Happ, G.M. McClelland, M. Breitwisch, A. Schrott, J.B. Philipp, M.H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C.F. Chen, E. Joseph, S. Zaidi, B. Yee, H.L. Lung, R. Bergmann, and C. Lam, IEDM Tech Dig., p. 346910.1-4, 2006