• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.54-58
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• 2021

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.

• Advances in nano research
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• 제13권1호
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• pp.77-86
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• 2022

This paper studied the peristaltic transport of upper convected Maxwell nanofluid through a porous medium in a heated (isothermal) symmetric vertical channel. The nanofluid is assumed to be electrically conducting in the presence of a uniform magnetic field. These phenomena are modeled mathematically by a differential equations system by taking low Reynolds number and long-wavelength approximation, the yield differential equations have solved analytically. A suggested new technique to display and discuss the trapping phenomenon is presented. We discussed and analyzed the pumping characteristics, heat function, flow velocity and trapping phenomena which were illustrated graphically through a set of figures for various values of parameters of the problem. The numerical results show that, there are remarkable effects on the vertical velocity, pressure gradient and trapping phenomena with the thermal change of the walls.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Journal of information and communication convergence engineering
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• 제10권2호
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1924-1926
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• 2001

A novel wet release process ($\mu$ CARP - Micro Channel Assisted Release Process) for releasing an extreme large-area plate structure without etching hole is proposed and experimented. Etching holes in conventional process reduce a effective area and degrade an optical characteristics by a diffraction. In addition, as the area of a released structure increases, the stietion becomes more serious. The proposed process resolves these problems by the introduction of a micro fluidic channel beneath the structure which will be released. In this paper, a 5 mm${\times}$5mm-single crystal silicon plate structure was released by the proposed $\mu$CARP without etch holes on the structure. The variation in etching time with respect to the of the introduced micro channel is also examined. This process is expected to be beneficial for the actuator of a nano-scale data storage and the scanning mirror.

• International journal of advanced smart convergence
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• 제5권4호
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• pp.21-25
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• 2016

Recent development in multi-channel surround is emerging in various formats to provide better stereoscopic and sound effects to consumers in recent broadcasting. The ability sound localize the sound sources in space is most considerable design factor on multi-channel surround system for human earing perception model. However, this paper propose the change of the sound localization according to the spacing of the speakers, which is not covered in the existing research focus on sound system design. Presently the sound system uses the position and number of the speakers to localize the sound. In the multi-channel surround environment, the proposed design uses the sound localization is caused by the directional characteristics of the speaker, the distance between the speakers and the distance between the listener and the speaker according to the directivity is required. The proposed design is simulated using virtual measurement with MATLAB simulation environment and performances are measured.

• 대한전자공학회논문지SD
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• 제45권4호
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• pp.57-63
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• 2008

본 논문에서는 Contact Etch Stop Layer (CESL)인 nitride film의 mechanical stress에 의해 인가되는 channel stress가 소자 특성에 미치는 영향에 대해 분석하였다. 잘 알려진 바와 같이 NMOS는 tensile stress와 PMOS에서는 compressive stress가 인가되었을 경우 drain current가 증가하였으며 그 원인을 체계적으로 분석하였다. NMOS의 경우 tensile stress가 인가됨으로써 back scattering ratio ($\tau_{sat}$)의 감소와 thermal injection velocity ($V_{inj}$)의 증가로 인해 mobility가 개선됨을 확인하였다. 또한 $\tau_{sat}$, 의 감소는 온도에 따른 mobility의 감소율이 작고, 그에 따른 mean free path ($\lambda_O$)의 감소율이 작기 때문인 것으로 확인되었다. 한편 PMOS의 compressive stress 경우에는 tensile stress에 비해 온도에 따른 mobility의 감소율이 크기 때문에 channel back scattering 현상은 심해지지만 source에서의 $V_{inj}$가 큰 폭으로 증가함으로써 mobility가 개선됨을 확인 할 수 있었다. 따라서 CES-Layer에 의해 인가된 channel stress에 따른 소자 특성의 변화는 inversion layer에서의 channel back scattering 현상과 source에서의 thermal injection velocity에 매우 의존함을 알 수 있다.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2002년도 마이크로/바이오 가시화기술부문 학술강연회
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• pp.51-78
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• 2002

A number of research groups worldwide are studying electronic implants that can be mounted on retinal optic nerve/visual cortex to restore vision of patients suffering from retinal degeneration. The implants consist of a neural interface made of biocompatible materials, one or more integrated circuits for stimuli generation, a camera, an image processor, and a telemetric channel. The realization of these classes of neural prosthetic devices is largely due to the explosive development of micro- and nano-electronics technologies in the late $20^{th}$ century and biotechnologies more recently. Animal experiments showed promise and some human experiments are in progress to indicate that recognition of images can be obtained and improved over time. We, at NBS-ERC of SNU, have started our own retinal implant project in 2000. We have selected polyimide as the biomaterial for an epi-retinal stimulator. In-vitro and in-vivo biocompatibility studies have been performed on the electrode arrays. We have obtained good affinity to retinal pigment epithelial cells and no harmful effect. The implant also showed very good stability and safety in rabbit eye for 12 weeks. We have also demonstrated that through proper stimulation of inner retina, meaning vision can be obtained.

• 대한전자공학회논문지SD
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• 제41권6호
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• pp.1-7
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• 2004

본 논문에서는 2차원 양자 역학적 모델링 및 시뮬레이션(quantum mechanical modeling and simulation)으로써, 자기정렬 이중게이츠 구조(self-aligned double-gate structure)인 FinFET에 관하여 결합된 푸아송-슈뢰딩거 방정식(coupled Poisson and Schrodinger equations)를 셀프-컨시스턴트(self-consistent)한 방법으로 해석하는 수치적 모델을 제안한다. 시뮬레이션은 게이트 길이(Lg)를 10에서 80nm까지, 실리콘 핀 두께($T_{fin}$)를 10에서 40nm까지 변화시켜가며 시행되었다. 시뮬레이션의 검증을 위한 전류-전압 특성을 실험 결과값과 비교하였으며, 문턱 전압 이하 기울기(subthreshold swing), 문턱 전압 롤-오프(thresholdvoltage roll-off), 그리고 드레인 유기 장벽 감소(drain induced barrier lowering, DIBL)과 같은 파라미터를 추출함으로써 단채널 효과를 줄이기 위한 소자 최적화를 시행하였다. 또한, 고전적 방법과 양자 역학적 방법의 시뮬레이션 결과를 비교함으로써,양자 역학적 해석의 필요성을 확인하였다. 본 연구를 통해서, FinFET과 같은 구조가 단채널 효과를 줄이는데 이상적이며, 나노-스케일 소자 구조를 해석함에 있어 양자 역학적 시뮬레이션이 필수적임을 알 수 있었다.

• 한국추진공학회지
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• 제17권3호
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• pp.47-55
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• 2013

본 연구에서는 곡관 채널에서의 비뉴튼 젤 추진제의 유동 특성에 대해 연구하였다. 물을 기본유체로 하는 모사젤을 Carbopol 941 젤화 작용제와 NaOH 농축액을 혼합하여 제작하였으며 입자 유무에 따른 유동 특성을 파악하기 위해 $Al_2O_3$ 나노 입자가 첨가된 젤을 제작하여 두 젤 추진제간의 유변학적 특성을 비교하였다. 두 모사젤에 대해 U-자형의 곡관부 위치별 유동특성과 Dean 와류(vortices)의 경향은 상이하였으나 나노 입자가 첨가된 모사젤 추진제의 경우 높은 컨시스턴시 지수에도 불구하고 두 모사젤 모두 비슷한 범위의 임계 Dean 수를 도출하였다. 나노 입자 첨가 유무와 무관하게 power-law 지수값이 임계 Dean 수를 결정하는데 주요 변수임을 판단할 수 있었으나 나노입자가 첨가된 젤의 경우 Dean 와류 강도의 변동폭이 상대적으로 크다는 결론을 내릴 수 있었다.