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Memristive Devices Based on RGO Nano-sheet Nanocomposites with an Embedded GQD Layer  

Kim, Yongwoo (Department of System Semiconductor Engineering, Sangmyung University)
Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.1, 2021 , pp. 54-58 More about this Journal
Abstract
The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.
Keywords
RGO; GQD; nanocomposites; memristive devices; resistive Switching;
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