• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.202-202
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• 2008

The world gross market of many kinds of electronics, such as TV and mobile phone has been increasing rapidly these days. It is mainly caused by the amazing developments of IT technology during past decade and the changes of individual life style for the better. Thanks to the increases of electronics manufactured in quantity, much more electronic components such as MLCC (multi layer ceramic capacitor) and PCB (printed circuit board), which are our main products, have been needed as a consequence. Though it was reported that total market of electronic components exceeds several hundreds of billion dollars, there are many manufactures struggling for survival in the competition of electronics components. Then the recognition of quality as a key technology has spread and the efforts for high-yield production lines have been kept in many companies. In this paper, our efforts to eliminate the contamination of particles and the diffusion of some volatile organic compounds which is very harmful to workers at production line have been introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.152-158
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• 2016

The bonding characteristics of MLCCs (multi layer ceramic capacitor, C1608) lead-free solder (SAC305) joints were evaluated through thermal shock test ($-40^{\circ}C{\sim}125^{\circ}C$, total 1,800 cycle). After the test, IMCs( intermetallic compounds) growth and cracks were verified, also shear strengths were measured for degradation of solder joints. In addition, The thermal stress distributions at solder joints were analyzed to compare the solder joints changes before and after according to thermal shock test by FEA (finite elements analysis). We considered the effects of IMCs growth at solder joints. As results, the bonding characteristics degradation was occurred according to initial crack, crack propagations and thermal stress concentration at solder-IMCs interface, when the IMCs grown to solder inside.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.19-23
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• 2004

A novel method of high speed, accurate circuit simulation in 3-dimensional (3-D) parallel-plate capacitors is investigated. The basic concept of the circuit simulation methods is partial element equivalent circuit model. The three test structures of 3-D parallel-plate capacitors are fabricated by using multi-layer low-temperature co-fired ceramic (LTCC) process and their S-parameters are measured between 50 MHz and 5 GHz. S-parameters are converted to Y-parameters, for comparing measured data with simulated data. The circuit model parameters of the each building block are optimized and extracted using HSPICE circuit simulator. This method is convenient and accurate so that circuit design applications can be easily manipulated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• Journal of Welding and Joining
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• v.24 no.6
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• pp.21-27
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• 2006

This study was focused on the evaluation of the thermo-mechanical board-level reliability of Pb-bearing and Pb-free surface mount assemblies. The composition of Pb-bearing solder was a typical Sn-37Pb and that of Pb-free solder used in this study was a representative Sn-3.0Ag-0.5Cu in mass %. Thermal shock test was chosen for the reliability evaluation of the solder joints. Typical $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed between both solders and Cu lead frame at the as-reflowed state, while a layer of $Cu_3Sn$ was additionally formed between the $Cu_6Sn_5$ and Cu lead frame during the thermal shock testing. Thickness of the IMC layers increased with increasing thermal shock cycles, and this is very similar result with that of isothermal aging study of solder joints. Shear test of the multi layer ceramic capacitor(MLCC) joints was also performed to investigate the degradation of mechanical bonding strength of solder joints during the thermal shock testing. Failure mode of the joints after shear testing revealed that the degradation was mainly due to the excessive growth of the IMC layers during the thermal shock testing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.206-210
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• 2010

$BaTiO_3$ dielectric ceramics are widely used to multi-layer ceramic capacitor. The $BaTiO_3$ powder was synthesized at $950^{\circ}C$ by using a solid state reaction and grinded by using a high-energy mill. And then, 2.53 wt% glass frit was added to the synthesized $BaTiO_3$ powders for lowering the sintering temperature. The mixed powders were sintered at various temperatures of $1170^{\circ}C$, $1200^{\circ}C$, $1230^{\circ}C$. Microstructures of the sintered $BaTiO_3$ ceramics were inspected by SEM and crystal structures were analyzed by XRD method. The relative dielectric constant was measured by using a impedance/gain phase analyzer. The synthesized $BaTiO_3$ powder had the tetragonal perovskite structure without secondary phase and the particle size was below 200 nm. The relative densities measured at the samples sintered at the temperature above $1200^{\circ}C$ were about 95%. The relative dielectric constant showed maximum value of 2310, which was measured in the specimen sintered at $1200^{\circ}C$. From these results, we could know that the added glass frit had effects on both lowering the sintering temperature and improving the dielectric property.

• Journal of Advanced Navigation Technology
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• v.23 no.2
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• pp.172-178
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• 2019

This paper has designed, fabricated, and analyzed the passive devices realized using low temperature co-fired ceramic (LTCC) multi layer substrates by dividing into the shrinkage process and the non-shrinkage process. Using two types of ceramic materials with dielectric constant 7 or 40, we have fabricated the same shape of various elements in 2 different processes and compared the characteristics. For the substrate of dielctric constant 40, compared with the shrinkage process which has 17% shrink in the X and Y directions with 36% shrink in the Z direction, the non-shrinkage process has 43% shrink in the Z direction without shrink in the X and Y directions, so high dimensional accuracy and surface flatness can be obtained. The inductances and capacitances of the fabricated elements are estimated from measurement using empirical analysis equations of parameters and implemented as a design library. Depending on the substrate and the process, the inductance and capacitance depending on the turn number of winding and unit area have been measured, and empirical polynomials are proposed to predict element values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.84-84
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• 2009

$BaTiO_3$는 perovskite 구조를 가지는 대표적인 강유전체 재료로서 MLCC (Multi Layer Ceramic Capacitor), PTC thermistor등에 널리 사용되어지고 있다. 최근 고용량 MLCC의 상업화와 함께 나노크기를 갖는 tetragonal phase의 $BaTiO_3$ 입자를 합성하기 위한 다양한 제조방법이 제시되고 있다. 또한 유전특성과 온도특성 및 신뢰성을 향상시키기 위해 많은 첨가제들이 연구되어지고 있다. 따라서 본 연구에서는 희토류 원소인 $Y_2O_3$를 첨가하여 유전특성 및 온도특성을 향상시키고자 하였다. 본 실험에서는 150nm 크기를 갖는 pure $BaTiO_3$ 분말을 사용하고 $Y_2O_3$의 양은 0.02 ~ 0.1wt%로 변수를 주어 첨가하였으며, 최적의 소결 조건을 찾기 위하여 1200, 1230, $1250^{\circ}C$에서 소결을 진행하였다. 실험방법으로는 균일한 혼합을 위하여 Iso-alcohol을 이용하여 48시간 ball-mill 하였으며 오븐에서 건조 후 ${\Phi}15$로 성형하여 소결을 진행하였다. 실험결과로는 $Y_2O_3$ 첨가량이 0.02wt% 부터 상온부터 상전이 온도 부근의 유전율 기울기는 완만해 지는 것을 확인할 수 있었으며, 소결시편의 정방정비 (tetragonality)도 뚜렷하게 나타났다. $Y_2O_3$ 첨가랑이 0.1 wt% 일 때는 첨가량의 증가로 인해 강유전성이 상쇄됨을 나타냈다. 이는 $2450^{\circ}C$에 이르는 매우 높은 용융온도와 $2350^{\circ}C$까지 상전이가 는 $Y_2O_3$를 미량 첨가할 때, 고온에서 높은 화학적 안정성과 내열성을 가져 온도 안정성이 향상된 것으로 판단된다.