Browse > Article
http://dx.doi.org/10.4313/JKEM.2003.16.5.361

Characterization of the Annealing Effect of 0.5 % Ce-doped Ba(Zr0.2Ti0.8)O3 Thin Films Grown by Rf Magnetron Sputtering Method  

최원석 (성균관대학교 정보통신공학부)
박용섭 (성균관대학교 정보통신공학부)
이준신 (성균관대학교 정보통신공학부)
홍병유 (성균관대학교 정보통신공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.5, 2003 , pp. 361-364 More about this Journal
Abstract
It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.
Keywords
RF magnetron sputtering; Ce-doped Ba($Zr_{0.2}Ti_{0.8}$)$O_3$ (BCZT); Thin Film; MLCC(Multi-layer ceramic capacitor);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 Sol-Gel 법을 이용한 PLZT 박막 커패시터의 전기적 특성 /
[ 박준열;정장호;이성갑;이영희 ] / 전기전자재료학회지   과학기술학회마을
2 ULSI DRAM의 Capacitor 절연막용 BST (Barium Strontium Titanate) 박막의 제작과 특성에 관한 연구 /
[ 류정선;강성준;윤영섭 ] / 전기전자재료학회지   과학기술학회마을
3 Diffuse ferroelectric phase transitions in <TEX>$Ba(Ti_{1-y}Zr_{y})O_{3}$</TEX> ceramics /
[ D.Hennings;A.Schnell ] / J. Am. Caram. Soc.   DOI
4 Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series <TEX>$Ba(Ti_{1-y}Zr_{y})O_{3}$</TEX> /
[ S.Hoffmann;R.Waser ] / Integrated Ferroelectrics   DOI   ScienceOn
5 Peroxo-oxalate preparation of doped barium titanate /
[ S.Gijp;L.Winnubst;H.Verweij ] / J. Am. Ceram. Soc.   DOI   ScienceOn
6 Highly insulative barium zironate-titanate thin films prepared by RF magnetron sputtering for dynamic random access memory applications /
[ T.B.Wu;C.M.Wu;M.L.Chen ] / Appl. Phys. Lett.   DOI   ScienceOn
7 Lanthanum substituted bismuth titanate for use in nonvolatile memories /
[ B.H.Park;B.S.Kang;S.D.Bu;T.W.Noh;J.Lee;W.Jo ] / Nature   DOI
8 PZT 강유전체 박막 캐패시터와 하부전극에 관한 연구 /
[ 박영;정세민;문상일;정규원;김성훈;송준태;이준신 ] / 전기전자재료학회지   과학기술학회마을