• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.594-599
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• 2005

In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.

• Journal of Electrochemical Science and Technology
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• v.7 no.2
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• pp.170-178
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• 2016

Composited molybdenum oxide and amorphous carbon (MoO₃/C) as anode material for lithium ion batteries has been successfully synthesized by calcining polyaniline (PANI) doped with ammonium heptamolybdate tetrahydrate (AMo). The as prepared electrode material was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and field emission scanning electron microscopy (FE-SEM). The electrochemical performance of the anode was investigated by galvanostatic charge/discharge, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). The MoO₃/C shows higher specific capacity, better cyclic performance and rate performance than pristine MoO₃ at room temperature. The electrochemical of MoO₃/C properties at various temperatures were also investigated. At elevated temperature, MoO₃/C exhibited higher specific capacity but suffered rapidly declines. While at low temperature, the electrochemical performance was mainly limited by the low kinetics of lithium ion diffusion and the high charge transfer resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.321-322
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• 2007

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1312_1313
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• 2009

In this study the fabrication technique of the planner field emission device structure with a DLC layer were studied. The bottom Mo electrode using electrochemical method on the DLC layer deposited using assist sputtering.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.58-59
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.167-167
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• 2005

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.195-199
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• 2011

Mo thin films were deposited on soda lime glass at room temperature by using DC magnetron sputtering The electrical and structural properties of the films were investigated by varying DC power and gas pressure as the deposition parameter. As DC power increased, the deposition rate of Mo films was increased and the electrical resistivity was decreased. It was observable that the crystallinity of the films was improved with increasing DC power. As gas pressure decreased, the deposition rate and resistivity of the films were decreased, and long rectangular grains were densely formed. With increasing gas pressure, the grains were transformed to a round shape and the voids on the film surface were increased. It was confirmed that the electrical resistivity of Mo films was increased as the amount of oxygen combined with Mo atoms increased. It was also disclosed that the films have low resistivity as the degree of coupling of oxygen with Mo was reduced due to the enhancement of the crystallinity of the films.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.