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http://dx.doi.org/10.4313/JKEM.2005.18.7.594

Analysis of PMOS Capacitor with Thermally Robust Molybdenium Gate  

Lee, Jeong-Min (한국항공대하교 항공전자공학과)
Seo, Hyun-Sang (한국항공대하교 항공전자공학과)
Hong, Shin-Nam (한국항공대하교 항공전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.7, 2005 , pp. 594-599 More about this Journal
Abstract
In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.
Keywords
Mo; Metal gate; Work-function; Gate-injection; Sheet resistance;
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