• Transactions on Electrical and Electronic Materials
• /
• v.12 no.2
• /
• pp.43-50
• /
• 2011

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

• ETRI Journal
• /
• v.32 no.4
• /
• pp.530-539
• /
• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• Journal of IKEEE
• /
• v.19 no.2
• /
• pp.232-236
• /
• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.1
• /
• pp.20-27
• /
• 2010

Modeling is essential to simulate the operation of integrated circuit (IC) before its fabrication. Seeing a large number of Metal-Oxide-Silicon Field-Effect-Transistor (MOSFET) models available, it has become important to understand them and compare them for their pros and cons. The task becomes equally difficult when the complexity of these models becomes very high. The paper reviews the mainstream models with their physical relevance and their comparisons. Major short-channel and quantum effects in the models are outlined. Emphasis is set upon the latest compact models like BSIM, MOS Models 9/11, EKV, SP etc.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.2
• /
• pp.303-307
• /
• 2006

In this paper, we have designed the p-type metal-oxide semiconductor field-effect transistor(pMOSFET) for SiGe devices with gate lengths of $0.9{\mu}m$ and $0.1{\mu}m$using the TCAD simulators. The electrical characteristics of devices have been investigated over the temperatures of 300 and 77K. We have used the two carrier transfer models(hydrodynamic model and drift-diffusion model). We how that the drain current is higher in the hydrodynamic model than the drift-diffusion model. When the gate length is $0.9{\mu}m$, the threshold voltage shows -0.97V and -1.15V for 300K and 77K, respectively. The threshold voltage is, however, nearly same at $0.1{\mu}m$ for 300K and 77K.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.6 no.1
• /
• pp.103-108
• /
• 2002

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade In response to the constant demand for increased speed, decreased power, and increased packing density. The state -of-the-art simulation programs are developed by engineers and scientists. This paper has compared commercial programs of Micro-tec and ISE-TCAD in device simulation. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths(Lg) 180㎚. We have presented MOSFET's characteristics such as I-V characteristic and electric field, and compared Micro-tec with ISE TCAD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.4
• /
• pp.284-288
• /
• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• Journal of IKEEE
• /
• v.21 no.1
• /
• pp.96-99
• /
• 2017

In this study the influence of the random dopant fluctuation (RDF) depending on the halo and LDD implantations for the metal-oxide-semiconductor field effect transistor is investigated through the 3D atomistic device simulation. For accuracy in calculation, the kinetic monte carlo method that models individual impurity atoms and defects in the device was applied to the atomistic simulation. It is found that halo implantation has the greater influence on RDF effects than LDD implantation; three-standard deviation of $V_{TH}$ and $I_{ON}$ induced by halo implantation is about 6.45 times and 2.46 times those of LDD implantation. The distributions of $V_{TH}$ and $I_{ON}$ are also displayed in the histograms with normal distribution curves.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.5
• /
• pp.302-305
• /
• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.22 no.2
• /
• pp.181-184
• /
• 2017

This study analyzes the turn-on and turn-off transients of a metal-oxide-semiconductor field-effect transistor (MOSFET) with high-switching frequency systems. In these systems, the voltage distortion becomes serious at the output terminal of a Vienna rectifier by the turn-off delay of the MOSFET. The current has low-order harmonics through this voltage distortion. This paper describes the transient of the turn-off that causes the voltage distortion. The algorithm for reducing the sixth harmonic using a proportional-resonance controller is proposed to improve the current distortion without complex calculation for compensation. The reduction of the current distortion by high-switching frequency is verified by experiment with the 2.5-kW prototype Vienna rectifier.