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Comparison on commercial simulators for nano-structure device simulation- For ISE-TCAD and Micro-tec -  

심성택 (군산대학교 전자정보공학부)
임규성 (군산대학교 전자정보공학부)
정학기 (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.6, no.1, 2002 , pp. 103-108 More about this Journal
Abstract
The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade In response to the constant demand for increased speed, decreased power, and increased packing density. The state -of-the-art simulation programs are developed by engineers and scientists. This paper has compared commercial programs of Micro-tec and ISE-TCAD in device simulation. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths(Lg) 180㎚. We have presented MOSFET's characteristics such as I-V characteristic and electric field, and compared Micro-tec with ISE TCAD.
Keywords
MOSFET; Micro-tec; ISE-TCAD; LDD; electric field;
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