• ETRI Journal
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• v.46 no.4
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• pp.708-715
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• 2024

We propose a 10-GHz 2 × 2 phased-array radio frequency (RF) receiver with an 8-bit linear phase and 15-dB gain control range using 65-nm complementary metal-oxide-semiconductor technology. An 8 × 8 phased-array receiver module is implemented using 16 2 × 2 RF phased-array integrated circuits. The receiver chip has four single-to-differential low-noise amplifier and gain-controlled phase-shifter (GCPS) channels, four channel combiners, and a 50-Ω driver. Using a novel complementary bias technique in a phase-shifting core circuit and an equivalent resistance-controlled resistor-inductor-capacitor load, the GCPS based on vector-sum structure increases the phase resolution with weighting-factor controllability, enabling the vector-sum phase-shifting circuit to require a low current and small area due to its small 1.2-V supply. The 2 × 2 phased-array RF receiver chip has a power gain of 21 dB per channel and a 5.7-dB maximum single-channel noise-figure gain. The chip shows 8-bit phase states with a 2.39° root mean-square (RMS) phase error and a 0.4-dB RMS gain error with a 15-dB gain control range for a 2.5° RMS phase error over the 10 to10.5-GHz band.

• Journal of the Korean Society of Marine Environment & Safety
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• v.28 no.spc
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• pp.23-29
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• 2022

To detect harmful chemical substances in seawater, we fabricated a prototype sensor and evaluated its performance. The prototype sensor consisted of a detector, housing, and driving circuit. We built the detector by printing an Indium-Tin-Oxide (ITO) nanoparticle film on a flexible substrate, and it had two detection parts for simultaneous detection of temperature and HNS concentration. The housing connected the detector and the driving circuit and was made of Teflon material to prevent chemical reactions that may affect sensor performance. The driving circuit supplied electric power, and display measured data using a bridge circuit and an Arduino board. We evaluated the sensor performances such as response (ΔR), the limit of detection (LOD), response time, and errors to confirm the specification.

• Journal of IKEEE
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• v.21 no.1
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• pp.96-99
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• 2017

In this study the influence of the random dopant fluctuation (RDF) depending on the halo and LDD implantations for the metal-oxide-semiconductor field effect transistor is investigated through the 3D atomistic device simulation. For accuracy in calculation, the kinetic monte carlo method that models individual impurity atoms and defects in the device was applied to the atomistic simulation. It is found that halo implantation has the greater influence on RDF effects than LDD implantation; three-standard deviation of $V_{TH}$ and $I_{ON}$ induced by halo implantation is about 6.45 times and 2.46 times those of LDD implantation. The distributions of $V_{TH}$ and $I_{ON}$ are also displayed in the histograms with normal distribution curves.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.1-176.1
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• 2014

Graphene has attracted an increasing attention due to its extraordinary electronic, mechanical, and thermal properties. Especially, the two dimensional (2D) sheet of graphene with an extremely high surface to volume ratio has a great potential in the preparation of multifunctional nanomaterials, as 2D supports to host metal nanoparticles (NPs). Copper oxide is widely used in various areas as antifouling paint, p-type semiconductor, dry cell batteries, and catalysts. Although the copper oxide(II) has been well known for efficient catalyst in C-N cross-coupling reaction, copper oxide(I) has not been highlighted. In this research, CuO and Cu2O nanoparticles (NPs) dispersed on the surface of grapehene oxide (GO) have been synthesized by impregnation method and their morphological and electronic structures have been systemically investigated using TEM, XRD, and XAFS. We demonstrate that both CuO and Cu2O on graphene presents efficient catalytic performance toward C-N cross coupling reaction. The detailed structural difference between CuO and Cu2O NPs and their effect on catalytic performance are discussed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.484-489
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• 1986

A device with variable stepped oxide layer along the edge region of Schottky junction have been designed and fabricated. The effect of this stepped oxide layer in the edge region improves the breakdown voltage as a result of the by increase of the depletion layer width, and decreases the leakage current as compared to the effect of conventional field oxide layer, when the reverse voltage was applied. Experimental results shown that the Schottky diode with the the reverse voltage was applied. Experimenal results show that the Schottky diode with the optimal stepped oxide layer maintains nearly ideal I-V characteristics and excellent breakdown voltage(170V) by reducing the edge effect inherent in metal-semiconductor contacts. The optimal conditions of stepped oxide layer are 1700\ulcornerin thickness and 10\ulcorner in length.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.867-872
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• 2016

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.67-70
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• 2003

In this paper, propose a new structure of MOFET(Metal-Oxide-Semiconductor Field Effect Transistor) which is widely application for semiconductor technologies. Eleminate the latch-up effect caused by closed devices when conpose a electronic circuit using proposed devices. In this device have a completely isolation structure, and advantage of leakage current elimination. Each independent devices are isolated by trench-well and oxide layer of SOI substrate. Using trench gate and self aligned techniques reduces parasitic capacitance between gate and source, drain. In this paper, we proposed the new structure of SOI MOSFET which has completely isolation and contains trench gate electrodes and SOI wafers. It is simulated by MEDICI that is device simulator.

• Prospectives of Industrial Chemistry
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• v.23 no.3
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• pp.32-41
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• 2020

사람들은 대부분의 시간을 실내에서 보내고 있으며, 실내에 존재하는 유해가스는 미량의 농도에도 불구하고 심각한 질환을 일으킬 수 있다. 금속산화물 반도체 가스센서는 감도가 우수하고, 구조가 간단하며, 초소형화가 가능한 장점이 있어 고가의 대형 장비를 사용하지 않고 실내 유해가스를 측정하는 데 효과적으로 이용될 수 있다. 본 기고문에서는 금속산화물 반도체를 이용한 가스 센서의 검지 원리를 고찰하고, 나노 구조 조절, 마이크로 리액터 및 이중층 구조를 이용한 가스 개질 등 실내 유해가스 측정을 위한 다양한 센서 설계방법을 소개하고자 한다.