JSTS:Journal of Semiconductor Technology and Science

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DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with $Si_{0.88}Ge_{0.12}(C)$ Heterostructure Channel

  • Choi, Sang-Sik (Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University) ;
  • Yang, Hyun-Duk (Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University) ;
  • Han, Tae-Hyun (Tachyonics) ;
  • Cho, Deok-Ho (Tachyonics) ;
  • Kim, Jea-Yeon (Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University) ;
  • Shim, Kyu-Hwan (Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Chonbuk National University)
  • Published : 2006.06.30
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Abstract

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

Keywords

References

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