• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.199-199
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• 2010

A back-gated MOSFET on silicon-on-insulator (SOI) substrate for pH sensor was investigated. We used concentrations of pH solution from 6 to 9. The fabricated back-gated MOSFET has current difference and threshold voltage shift by pH concentrations. Therefore, It can be used to simplification of conventional pH sensor.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.137-143
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• 2005

Research in the field of biosensor has enormously increased over the recent years. The metal-oxide semiconductor field effect transistor (MOSFET) type protein sensor offers a lot of potential advantages such as small size and weight, the possibility of automatic packaging at wafer level, on-chip integration of biosensor arrays, and the label-free molecular detection. We fabricated MOSFET protein sensor and proposed the gold-black electrode as the gate metal to improve the response. The experimental results showed that the output voltage of MOSFET protein sensor was varied by concentration of albumin proteins and the gold-black gate increased the response up to maximum 13 % because it has the larger surface area than that of planar-gold gate. It means that the expanded gate allows a larger number of ligands on same area, and makes the more albumin proteins adsorbed on gate receptor.

• Journal of IKEEE
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• v.19 no.2
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.65-69
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• 1998

본 연구는 전하 결합 영양소자에서 감지회로의 특성을 향상시키기 위하여 N형 MOSFET과 Polysilcon 저항에 의한 전압 분배 회로를 가진 감지회로를 설계하였다. 감지회 로에 흐르는 전류는 전압분배회로를 N형 MOSFET으로 설계하였을때가 Polysilicon 저항으 로 설계한 경우보다 감도 특성도 좋은 것으로 나타났다. 이는 전압분배회로를 Polysilicon으 로 설계한 경우보다 N형 MOSFET으로 설계하였을 때 동작 주파수가 높을수록 전압이득 특성이 우수하기 때문이다. 감지회로에 흐르는 전류는 전압분배회로를 N형 MOSFET으로 설계하였을 때 2mA 정도를 나타내고 polysilcon으로 설계하였을 때 4mAwjd도로 나타났다.

• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.102-105
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• 2006

In-vivo dosimetry is an essential tool of quality assurance programs in radiotherapy. The most commonly used techniques to verify dose are thermoluminescence dosimeter (TLD) and diode detectors. Metal oxide semiconductor field-effect transistor (MOSFET) has been recently proposed for using in radiation therapy with many advantages. The reproducibility, linearity, isotropy, dose rate dependence of the MOSFET dosimeter were studied and its availability was verified. Consequently the results can be used to improve therapeutic planning procedure and minimize treatment errors in radiotherapy.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.1-6
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• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.387-394
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• 2005

In order to design SOI CMOS image sensors, SOI MOSFET model parameters were extracted using the equation of bulk MOSFET model parameters and were optimized using SPICE level 2. Simulated I-V characteristics of the SOI NMOSFET using the extracted model parameters were compared to the experimental I-V characteristics of the fabricated SOI NMOSFET. The simulation results agreed well with experimental results. A unit pixel for SOI CMOS image sensors was designed and was simulated for the PPS, APS, and logarithmic circuit using the extracted model parameters. In these CMOS image sensors, a nano-wire MOSFET photodetector was used. The output voltage levels of the PPS and APS are well-defined as the photocurrent varied. It is confirmed that SOI CMOS image sensors are faster than bulk CMOS image sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.