Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Design of SOI CMOS image sensors using a nano-wire MOSFET-structure photodetector

나노 와이어 MOSFET 구조의 광검출기를 가지는 SOI CMOS 이미지 센서의 픽셀 설계

  • Do, Mi-Young (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Shin, Young-Shik (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Park, Jae-Hyoun (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Seo, Sang-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Hoon (Korea Electronics Technology Institute)
  • 도미영 (경북대학교 전기전자공학과) ;
  • 신영식 (경북대학교 전기전자공학과) ;
  • 이성호 (경북대학교 전기전자공학과) ;
  • 박재현 (경북대학교 전기전자공학과) ;
  • 서상호 (경북대학교 전기전자공학과) ;
  • 신장규 (경북대학교 전기전자공학과) ;
  • 김훈 (한국전자부품연구원)
  • Published : 2005.11.30
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Abstract

In order to design SOI CMOS image sensors, SOI MOSFET model parameters were extracted using the equation of bulk MOSFET model parameters and were optimized using SPICE level 2. Simulated I-V characteristics of the SOI NMOSFET using the extracted model parameters were compared to the experimental I-V characteristics of the fabricated SOI NMOSFET. The simulation results agreed well with experimental results. A unit pixel for SOI CMOS image sensors was designed and was simulated for the PPS, APS, and logarithmic circuit using the extracted model parameters. In these CMOS image sensors, a nano-wire MOSFET photodetector was used. The output voltage levels of the PPS and APS are well-defined as the photocurrent varied. It is confirmed that SOI CMOS image sensors are faster than bulk CMOS image sensors.

Keywords

References

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