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http://dx.doi.org/10.5369/JSST.2005.14.6.387

Design of SOI CMOS image sensors using a nano-wire MOSFET-structure photodetector  

Do, Mi-Young (School of Electronic and Electrical Engineering, Kyungpook National University)
Shin, Young-Shik (School of Electronic and Electrical Engineering, Kyungpook National University)
Lee, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University)
Park, Jae-Hyoun (School of Electronic and Electrical Engineering, Kyungpook National University)
Seo, Sang-Ho (School of Electronic and Electrical Engineering, Kyungpook National University)
Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National University)
Kim, Hoon (Korea Electronics Technology Institute)
Publication Information
Journal of Sensor Science and Technology / v.14, no.6, 2005 , pp. 387-394 More about this Journal
Abstract
In order to design SOI CMOS image sensors, SOI MOSFET model parameters were extracted using the equation of bulk MOSFET model parameters and were optimized using SPICE level 2. Simulated I-V characteristics of the SOI NMOSFET using the extracted model parameters were compared to the experimental I-V characteristics of the fabricated SOI NMOSFET. The simulation results agreed well with experimental results. A unit pixel for SOI CMOS image sensors was designed and was simulated for the PPS, APS, and logarithmic circuit using the extracted model parameters. In these CMOS image sensors, a nano-wire MOSFET photodetector was used. The output voltage levels of the PPS and APS are well-defined as the photocurrent varied. It is confirmed that SOI CMOS image sensors are faster than bulk CMOS image sensors.
Keywords
SOI; CMOS image sensor; MOSFET photodetector;
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