• Title/Summary/Keyword: LDO

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A Design of LDO(Low Dropout Regulator) with Enhanced Settling Time and Regulation Property (정착시간과 레귤레이션 특성을 개선한 LDO(Low Dropout Regulator)의 설계)

  • Park, Kyung-Soo;Park, Jea-Gun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.60 no.3
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    • pp.126-132
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    • 2011
  • A conventional LDO(Low Dropout Regulator) uses one OPAMP and one signal path. This means that OPAMP's DC Gain and Bandwidth can't optimize simultaneously within usable power. This also appears that regulation property and settling time of LDO can't improve at the same time. Based on this idea, a proposed LDO uses two OPAMP and has two signal path. To improve regulation property, OPAMP where is used in the path which qualities DC gain on a large scale, bandwidth designed narrowly. To improve settling time, OPAMP where is used in the path which qualities DC gain small, bandwidth designed widely. A designed LDO used 0.5um 1P2M process and provided 200mA of output current. A line regulation and load regulation is 12.6mV/V, 0.25mV/mA, respectively. And measured settling time is 1.5us in 5V supply voltage.

Design of a Low Drop-out Regulator with a UVLO Protection Function (UVLO 보호기능이 추가된 LDO 레귤레이터 설계)

  • Park, Won Kyeong;Lee, Su Jin;Park, Yong Su;Song, Han Jung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.10
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    • pp.239-244
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    • 2013
  • This paper presents a design of the CMOS LDO regulator with a UVLO protection function for a high speed PMIC. Proposed LDO regulator circuit consists of a BGR reference circuit, an error amplifier and a power transistor and so on. UVLO block between the power transistor and the power supply is added for a low input protection function. Also, UVLO block showed normal operation with turn-off voltage of 2.7V and turn-on voltage of 4 V in condition of 5 V power supply. Proposed circuit generated fixed 3.3 V from a supply of 5V. From SPICE simulation results using a $1{\mu}m$ high voltage CMOS technology, simulation results were 5.88 mV/V line regulation and 27.5 uV/mA load regulation with load current 0 mA to 200 mA.

A Design of High PSRR LDO over Wide Frequency Range without External Capacitor (외부 커패시터 없이 넓은 주파수 범위에서 높은 PSRR 갖는 LDO 설계)

  • Kim, Jin-Woo;Lim, Shin-Il
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.12
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    • pp.63-70
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    • 2013
  • This paper describes a high PSRR low-dropout(LDO) linear regulator for wide frequency range without output-capacitor. Owing to both of the cascode compensation technique and the current buffer compensation technique in nested Miller compensation loop, the proposed LDO not only maintaines high stability but also achieves high PSRR over wide frequency range with reasonable on-chip capacitances. Since the external capacitor is removed by the proposed compensation techniques, the cost for pad is eliminated. The designed LDO works under the input voltage range from 2.5V to 4.5V and provides up to 10mA load current with the output voltage of 1.8V. The LDO was implemented with 0.18um CMOS technology and the area is 300um X 120 um. The measured power supply rejection ratio(PSRR) is -76dB and -43dB at DC and 1MHz, respectively. The operating current is 25uA.

Fast-Transient Digital LDO Regulator With Binary-Weighted Current Control (이진 가중치 전류 제어 기법을 이용한 고속 응답 디지털 LDO 레귤레이터)

  • Woo, Ki-Chan;Sim, Jae-Hyeon;Kim, Tae-Woo;Hwang, Seon-Kwang;Yang, Byung-Do
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.6
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    • pp.1154-1162
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    • 2016
  • This paper proposes a fast-transient digital LDO(Low dropout) regulator with binary-weighted current control technique. Conventional digital LDO takes a long time to stabilize the output voltage, because it controls the amount of current step by step, thus ringing problem is generated. Binary-weighted current control technique rapidly stabilizes output voltage by removing the ringing problem. When output voltage reliably reaches the target voltage, It added the FRZ mode(Freeze) to stop the operation of digital LDO. The proposed fast response digital LDO is used with a slow response DC-DC converter in the system which rapidly changes output voltage. The proposed digital controller circuit area was reduced by 56% compared to conventional bidirectional shift register, and the ripple voltage was reduced by 87%. A chip was implemented with a $0.18{\mu}F$ CMOS process. The settling time is $3.1{\mu}F$ and the voltage ripple is 6.2mV when $1{\mu}F$ output capacitor is used.

A Design of LORAN Disciplined Oscillator

  • Hwang, Sang-Wook;Choi, Yun Sub;Yeo, Sang-Rae;Park, Chansik;Yang, Sung-Hoon;Lee, Sang Jeong
    • Journal of Positioning, Navigation, and Timing
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    • v.2 no.1
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    • pp.75-80
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    • 2013
  • This article presents the design of long range navigation (LORAN)-disciplined oscillator (LDO), employing the timing information of the LORAN system, which was developed as a backup system that corrects the vulnerability of the global positioning system (GPS)-based timing information utilization. The LDO designed on the basis of hardware generates a timing source synchronized with reference to the timing information of the LORAN-C receiver. As for the LDO-based timing information measurement, the Kalman filter was applied to estimate the measurement of which variance was minimized so that the stability performance could be improved. The oven-controlled crystal oscillator (OCXO) was employed as the local oscillator of the LDO. The controller was operated by digital proportional-integral-derivative (PID) controlling method. The LDO performance evaluation environment that takes into account the additional secondary factor (ASF) of the LORAN signals allows for the relative ASF observation and data collection using the coordinated universal time (UTC). The collected observation data are used to analyze the effect of ASF on propagation delay. The LDO stability performance was presented by the results of the LDO frequency measurements from which the ASF was excluded.

Detecting LDoS Attacks based on Abnormal Network Traffic

  • Chen, Kai;Liu, Hui-Yu;Chen, Xiao-Su
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.6 no.7
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    • pp.1831-1853
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    • 2012
  • By sending periodically short bursts of traffic to reduce legit transmission control protocol (TCP) traffic, the low-rate denial of service (LDoS) attacks are hard to be detected and may endanger covertly a network for a long period. Traditionally, LDoS detecting methods mainly concentrate on the attack stream with feature matching, and only a limited number of attack patterns can be detected off-line with high cost. Recent researches divert focus from the attack stream to the traffic anomalies induced by LDoS attacks, which can detect more kinds of attacks with higher efficiency. However, the limited number of abnormal characteristics and the inadequacy of judgment rules may cause wrong decision in some particular situations. In this paper, we address the problem of detecting LDoS attacks and present a scheme based on the fluctuant features of legit TCP and acknowledgment (ACK) traffic. In the scheme, we define judgment criteria which used to identify LDoS attacks in real time at an optimal detection cost. We evaluate the performance of our strategy in real-world network topologies. Simulations results clearly demonstrate the superiority of the method proposed in detecting LDoS attacks.

High-Frequency PSR-Enhanced LDO regulator Using Direct Compensation Transistor (직접 보상 트랜지스터를 사용하는 고주파 PSR 개선 LDO 레귤레이터)

  • Yun, Yeong Ho;Kim, Daejeong;Mo, Hyunsun
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.722-726
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    • 2019
  • In this paper, we propose a low drop-out (LDO) regulator with improved power-supply rejection (PSR) characteristics in the high frequency region. In particular, an NMOS transistor with a high output resistance is added as a compensation circuit to offset the high frequency noise passing through the finite output resistance of the PMOS power switch. The elimination of power supply noise by the compensating transistor was explained analytically and presented as the direction for further improvement. The circuit was fabricated in a $0.35-{\mu}m$ standard CMOS process and Specter simulations were carried out to confirm the PSR improvement of 26 dB compared to the conventional LDO regulator at 10 MHz.

LDO Regulator with Improved Regulation Characteristics and Feedback Voltage Buffer Structure (Feedback Buffer 구조 및 향상된 Regulation 특성을 갖는 LDO regulator)

  • Jung, Jun-Mo;Park, Tae-Ryong
    • Journal of IKEEE
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    • v.26 no.3
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    • pp.462-467
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    • 2022
  • The feedback buffer structure is proposed to alleviate the overshoot and undershoot phenomenon and the regulation of the output voltage. The conventional LDO regulator undergoes a regulation voltage change caused by a constant load current change. An LDO regulator with a feedback voltage sensing structure operates in the input voltage range of 3.3 to 4.5 V and has a load current of up to 150 mA at output voltage of 3 V. According to the simulation results, a regulation value of 6.2 mV was ensured when the load current uniformly changed to 150 mA.

Design of the LDO Regulator with 2-stage wide-band OTA for High Speed PMIC (고속 PMIC용 2단 광대역 OTA방식의 LDO 레귤레이터 설계)

  • Kwon, Bo-Min;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.4
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    • pp.1222-1228
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    • 2010
  • This paper presents a design of the CMOS LDO regulator with a fast transient response for a high speed PMIC(power management integrated circuit). Proposed LDO regulator circuit consists of a reference voltage circuit, an error amplifier and a power transistor. 2-stage wide-band OTA buffer between error amplifier and power transistor is added for a good output stability. Although conventional source follower buffer structure is simple, it has a narrow output swing and a low S/N ratio. In this paper, we use a 2-stage wide-band OTA instead of source follower structure for a buffer. From HSPICE simulation results using a $0.5{\mu}m$ CMOS standard technology, simulation results were 16 mV/V line regulation and 0.007 %/mA load regulation.

A Design of Wide-Bandwidth LDO Regulator with High Robustness ESD Protection Circuit

  • Cho, Han-Hee;Koo, Yong-Seo
    • Journal of Power Electronics
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    • v.15 no.6
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    • pp.1673-1681
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    • 2015
  • A low dropout (LDO) regulator with a wide-bandwidth is proposed in this paper. The regulator features a Human Body Model (HBM) 8kV-class high robustness ElectroStatic Discharge (ESD) protection circuit, and two error amplifiers (one with low gain and wide bandwidth, and the other with high gain and narrow bandwidth). The dual error amplifiers are located within the feedback loop of the LDO regulator, and they selectively amplify the signal according to its ripples. The proposed LDO regulator is more efficient in its regulation process because of its selective amplification according to frequency and bandwidth. Furthermore, the proposed regulator has the same gain as a conventional LDO at 62 dB with a 130 kHz-wide bandwidth, which is approximately 3.5 times that of a conventional LDO. The proposed device presents a fast response with improved load and line regulation characteristics. In addition, to prevent an increase in the area of the circuit, a body-driven fabrication technique was used for the error amplifier and the pass transistor. The proposed LDO regulator has an input voltage range of 2.5 V to 4.5 V, and it provides a load current of 100 mA in an output voltage range of 1.2 V to 4.1 V. In addition, to prevent damage in the Integrated Circuit (IC) as a result of static electricity, the reliability of IC was improved by embedding a self-produced 8 kV-class (Chip level) ESD protection circuit of a P-substrate-Triggered Silicon Controlled Rectifier (PTSCR) type with high robustness characteristics.