• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.7-12
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• 2007

A SPICE-based 3-dimensional circuit model of LED(Light-Emitting Diode) was developed for the design optimization and analysis of high-brightness LEDs. An LED is represented as an array of pixel LEDs with small preassigned areas, and each of the pixel LEDs is composed of circuit networks representing the thin-film layers(n-metal, n- and p-type semiconductor layers, and p-metal), ohmic contacts, and pn-junctions. Each of the thin-film layers and contact resistances is modeled by a resistance network, and the pn-junction is modeled by a conventional pn-junction diode. It has been found that the simulation results using the model and the corresponding parameters precisely fit the measured LED characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.1-12
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• 2003

In this study, a regime where independent treatment of SETs in transient simulations is valid has been identified quantitatively. It is found that as in the steady-state case, each SET can be treated independently even in the transient case when the interconnection capacitance is large enough. However, the value of the load capacitance $C_{L}$of the interconnections for the independent treatment of SETs is approximately 10 times larger than that of the steady state case. A compact SET transient model is developed for transient circuit simulation by SPICE. The developed model is based on a linearized equivalent circuit and the solution of master equation is done by the programming capabilities of the SmartSpice. Exact delineation of several simulation time scales and the physics-based compact model make it possible to accurately simulate hybrid circuits in the time scales down to several tens of pico seconds. The simulation time is also shown to depend on the complexity level of the transient model.l.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.19-21
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• 2002

Electroded lamps operated at a high enough frequency can usually be modeled for the purpose of ballast design, as a resistor. Electrodeless fluorescent lamps include other components such as the arc tube's inductance. But that's impedance is small and so will be neglected in this paper. So, electrodeless fluorescent lamps is modeled as a resistor. A SPICE compatible model was developed for an electrodeless fluorescent lamp(OSRAM SYLVANIA ICETRON/ENDURA 150W).

• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.68-72
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• 1998

The parameter through the motor designing program is used to predict motor response and design the motor drive circuits. The application programs such as "Saber" are often used for these. However, making the electrical model of motor for these simulation tool is uncomfortable and impossible for general users. Therefore, in this paper, we develop the "Spice" library generation program with the motor designing program "Motor Expert". This program will assist the user to make the motor library comfortablely and correctlyry comfortablely and correctly

• Journal of Sensor Science and Technology
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• v.22 no.1
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• pp.44-48
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• 2013

For a successful commercialization of microbolometer, it is required to develop a robust package including thermal stabilizing mechanism. In order to regulate the temperature within some operating range, thermoelectric cooler is generally used but it's not easy to model the whole package due to the coupled physics nature of thermoelectric cooler. In this paper, SPICE-compatible modeling methodology of a microbolometer package is presented, whose steady-state results matched well with FEM results at the maximum difference of 5.95%. Although the time constant difference was considerable as 15.7%, it can be offset by the quite short simulation time compared to FEM simulation. The developed model was also proven to be useful for designing the thermal stabilizer through parametric and transient analyses under the various working conditions.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2281-2285
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• 2011

An algorithm for extracting SPICE MOS level 2 model parameters for the high voltage MOSFET DC model is proposed. The optimization method for analyzing the nonlinear data of the current-voltage curve using the Gauss-Newton algorithm is proposed and the pre-process step for calculating the threshold voltage and the mobility is proposed. The drain current obtained from the proposed method shows the maximum relative error of 5.6% compared with the drain current of 2-dimensional device simulation for the high voltage MOSFET.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.251-258
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• 1994

To apply the Power MOSFET to the high powerd circuits, the parallel operation of the Power MOSFET must be considered because of their low power rating. This means, in practical applications, design methods for the parallel operations are required. However, it is very difficult to investigate the problem of parallel operations by directly changing the internal parameters of the MOSFET. Thus, in this paper, the effects of internal parameters for the parallel operation are investigated using SPICE program which is often used and known that the program is very reliable. The investigation results show that while the gate resistance and gate capacitances are the parameters which affect to the dynamic switching operations, the drain and source resistances are the parameters which affect to the steady-state current unbalances. Through this investigation, the design methods for the parallel operation of the MOSFET are suggested, which, in turn, contributes to the practical use of Power MOSFETs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.12A
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• pp.1985-1991
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• 1999

In this paper, complete and general two-port lumped Spice-network model is developed for a lossy transmission line. This model is realized as a Spice subcircuit, by means of standard lumped network elements and mathematical functions. It is used as a component in the time-domain simulation of a high-speed data transmission line such as IMI(Inter Module Interface) data path in HANbit ACE 64 ATM switching system. The only required Spice network elements are resistance and frequency-dependent controlled-voltage sources. Such frequency-dependent sources are realized by utilizing the standard Hspice mathematical functions FREQ, DELAY, and POLY.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1182-1187
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• 2013

Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.