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http://dx.doi.org/10.5370/KIEE.2011.60.12.2281

A Study on the SPICE Model Parameter Extraction Method for the DC Model of the High Voltage MOSFET  

Lee, Un-Gu (부천대학교 정보통신과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.60, no.12, 2011 , pp. 2281-2285 More about this Journal
Abstract
An algorithm for extracting SPICE MOS level 2 model parameters for the high voltage MOSFET DC model is proposed. The optimization method for analyzing the nonlinear data of the current-voltage curve using the Gauss-Newton algorithm is proposed and the pre-process step for calculating the threshold voltage and the mobility is proposed. The drain current obtained from the proposed method shows the maximum relative error of 5.6% compared with the drain current of 2-dimensional device simulation for the high voltage MOSFET.
Keywords
Parameter extractor; Gauss-Newton algorithm; High voltage MOSFET; Parameter optimization; SPICE;
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