• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.267-268
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• 2002

Microbeam is a new avenue of radiation research especially in radiation biology and radiation protection. Selective irradiation of an ionizing particle to a targeted cell organelle may disclose such mechanisms as signal transaction among cell organelles and cell-to-cell communication in the processes toward an endpoint observed. Bystander effect, existence of which is clearly evidenced by application of the particle microbeam to biological experiments, suggests potential underestimation in the conventional risk estimation at low particle fluence rates, such as environment of space radiations in ISS (International Space Station). To promote these studies we started the construction of our microbeam facility (named as SPICE) to our HVEE Tandem accelerator (3.4 MeV proton and 5.1 MeV $^4$He$\^$2+/). For our primary goal, "irradiation of single particle to cell organelle within a position resolution of 2 micrometer in a reasonable irradiation time", special features are considered. Usage of a triplet Q magnet for focussing the beam to submicron of size is an outstanding feature compared to facilities of other institutes. Followings are other features: precise position control of cell dish holder, design of the cell dish, data acquisition of microscopic image of a cell organelle (cell nucleus) and data processing, a reliable particle detection, soft and hard wares to integrate all these related data, to control and irradiate exactly determined number of particles to a targeted spot.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.226-235
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• 1999

To investigate SPICE noise model and the behavior of its parameters, 1/f noise of NMOS devices fabricated by BiCMOS process is measured and compared to the various noise models and measured results. For the long channel devices, bias dependence of the drain current noise power spectral density $S_{Id}$ of NMOS is similar to the previous results. Equivalent gate noise power spectral density $S_{Vg}$ shows weak dependence on the gate and drain voltages in long channel NMOS as the previous results. However, it is shown that most of published noise models are difficult to apply to short channel devices. Therefore, in this study, with comparison of our experimental results, we have tried to find the model of 1/f noise, appropriate for our NMOS device fabricated by BiCMOS process.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.83-91
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• 2000

This paper presents a new technique to reduce a large interconnect circuit with tens of thousands of elements into the one that is small enough to be analyzed by circuit simulators such as SPICE. This technique takes a fundamentally different approach form the conventional methods based on the interconnect circuit structure analysis and several rules based on the Elmore time constant. The time moments are computed form the circuit consisting of the interconnect circuit and the CMOS gate driver model computed by the AWE technique. Then, the equivalent RC circuit is synthesized from those moments. The characteristics of the driving CMOS gate can be reflected with the high degree of accuracy and the size of the compressed circuit is determined by the number of output nodes regardless of the size of the original interconnect circuits. This technique has been implemented in C language, applied to several interconnect circuits driven by a 0.5${\mu}m$ CMOS gate and the equivalent RC circuits with more than 99% reduction ratio and accuracy with 1 ~ 10% error in therms of propagation delays were obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.10C
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• pp.798-804
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• 2008

This paper proposes a low-power circuit for detecting and correcting L2 cache errors during microprocessor data image processing. A simplescalar-ARM is used to analyze input and output data by accessing the microprocessor's L2 cache during image processing in terms of the data input and output frequency as well as the variation of each bit for 32-bit processing. The circuit is implemented based on an H-matrix capable of achieving low power consumption by extracting bits with small and large amounts of variation and allocating bits with similarities in variation. Simulation is performed using H-spice to compare power consumption of the proposed circuit to the odd-weight-column code used in a conventional microprocessor. The experimental results indicated that the proposed circuit reduced power consumption by 17% compared to the odd-weight-column code.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.9
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• pp.64-72
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• 1998

In this paper, the design of a current integrator for low-voltage, low-power, and high frequency applications using complementary high swing cascode current-mirror is presented. The proposed integrator decreases output current errors due to non-zero input resistance and non-infinite output resistance of the simple current integrator. As a design example, the 3rd order Butterworth lowpass filter is designed by a leapfrog method. Also, we apply the predistortion design method to reduce the magnitude distortion which occurs at a cutoff frequency by the undesirable phase shift of a lossless current integrator. The designed current-mode filter is simulated and examined by SPICE using 0.8$\mu\textrm{m}$ CMOS n-well process parameters. The simulation results show 20MHz cutoff frequency and 615㎼ power dissipation with a 2V power supply. And the cutoff frequency of the filters can be easily changed by the DC bias current.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.6
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• pp.854-862
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• 1993

All of the CMOS analog and analog-digital systems have composed with several basic circuits, and among them, a important block, the amplifier part can affect the system's performance, Therefore, according to the uses in the system, the amplifier circuit have designed as various architectures (high-gain, low-noise, high-speed circuit, etc...). In this paper, we have proposed a new CMOS differential amplifier circuit. This circuit is differential to single ended input stage comprised of CMOS complementary gain circuits having internally biasing configurations. These architectures can be achieved the high gain and reduced the transistors for biasing. As a results of SPICE simulation with the standard $1.5{\mu}m$ processing parameter, the gain of the proposed circuit have a doubly value of the typical circuit's while maintaining other characteristics(phase margin, offset, etc...). And the proposed circuit is applicated in a simple CMOS comparator which has the settling time in 7nsec(CL=1pF) and the igh output swing $({\pm}4.5V)$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.71-78
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• 2005

In this paper, we propose a transceiver for noncoherent OOK(On-Off Keying) Ultra Wide Band system based on magnitude detection. The proposed transceiver are designed using 0.18 micron CMOS technology and verified by simulation using SPICE and measurement. The proposed transceiver consist of parallelizer, Analog-to-Digital converter, clock generator, PLL and impulse generator. The time resolution of 1ns is obtained with 125MHz system clocks and 8x parallelization is carried out. The synchronized eight outputs with 2-bit resolution are delivered to the baseband. Impulse generator produces 1ns width pulse using digital CMOS gates. The simulation results and measurement show the feasibility of the proposed transceiver for UWB communication system.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.34-41
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• 1999

In this paper, hot carrier induced performance degradation of peripheral circuits in memory devices such as static type imput buffer, latch type imput buffer and sense amplifier circuit has been measured and analyzed. The used design and fabrication of the peripheral circuits were $0.8 {\mu}m$ standard CMOS process. The analysis method is to find out which device is most significantly degraded in test circuits by using spice simulation, and then to characterize the correlation between device and circuit performance degradation. From the result of the performance degradation of static type input buffer, the trip point was increased due to the transconductance degradation of NMOS. In the case of latch type input buffer, there was a time delay due to the transconductance degradation of NMOS device. Finally, hot carrier induced the decrease of half-Vcc voltage and the increased of sensing voltage in sense amplifier circuits have been measured.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.6
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• pp.44-50
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• 2002

A novel technique for minimization of simultaneous switching noise is Presented. Dual Layer Power Line (DLPL) structure i:; newly proposed for a possible silicon realization of a mutual inductor, with which an instant large current in the power line is half-divided flowing through two different, but closely coupled, layers in opposite directions. This mutual inductance between two power layers enables us to significantly reduce the switching noise. SPICE simulations show that with a mutual coupling coefficient higher than 0.8, the switching noise reduces by 63% compared to the previously reported solutions. This DLPL technique can also be applied to PCB artworks.